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SI3442DVD84Z PDF预览

SI3442DVD84Z

更新时间: 2024-01-31 00:07:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
7页 74K
描述
Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SI3442DVD84Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):4.1 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3442DVD84Z 数据手册

 浏览型号SI3442DVD84Z的Datasheet PDF文件第1页浏览型号SI3442DVD84Z的Datasheet PDF文件第2页浏览型号SI3442DVD84Z的Datasheet PDF文件第3页浏览型号SI3442DVD84Z的Datasheet PDF文件第4页浏览型号SI3442DVD84Z的Datasheet PDF文件第5页浏览型号SI3442DVD84Z的Datasheet PDF文件第7页 
Typical Electrical and Thermal Characteristics (continued)  
2
25  
VDS = 5V  
1a  
20  
1.5  
T = -55°C  
J
25°C  
125°C  
15  
1b  
1c  
1
0.5  
0
10  
5
4.5"x5" FR-4 Board  
TA  
25o  
Still Air  
=
C
0
0
0.2  
0.4  
0.6  
0.8  
1
0
2
4
6
8
10  
2
2oz COPPER MOUNTING PAD AREA (in  
)
I
, DRAIN CURRENT (A)  
D
Figure 14. SuperSOTTM-6 Maximum Steady-State  
Figure 13. Transconductance Variation with  
Power Dissipation versus Copper Mounting Pad  
Area.  
Drain Current and Temperature.  
5
4.5  
4
20  
10  
5
1a  
2
1
3.5  
1b  
0.5  
1c  
VGS = 4.5V  
0.2  
0.1  
3
4.5"x5" FR-4 Board  
SINGLE PULSE  
TA = 25 o  
C
RJA = See Note 1c  
q
Still Air  
0.05  
2.5  
2
TA = 25°C  
VGS= 4.5V  
0.02  
0.01  
0
0.2  
0.4  
0.6  
0.8  
)
1
0.1  
0.2  
0.5  
DS  
1
2
5
10  
20  
40  
2
2oz COPPER MOUNTING PAD AREA (in  
V
, DRAIN-SOURCE VOLTAGE (V)  
Figure 15. Maximum Steady-State Drain Current  
versus Copper Mounting Pad Area.  
Figure 16. Maximum Safe Operating Area.  
1
D = 0.5  
0.5  
R
(t) = r(t) * R  
JA  
q
JA  
q
R
0.2  
0.1  
0.2  
0.1  
= See Note 1c  
JA  
q
P(pk)  
0.05  
0.05  
t1  
0.02  
0.01  
t2  
0.02  
0.01  
T
- T = P * R  
(t)  
J
A
JA  
q
Single Pulse  
Duty Cycle, D = t / t  
2
1
0.005  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
300  
t 1, TIME (sec)  
Figure 17. Transient Thermal Response Curve.  
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change  
depending on the circuit board design.  
SI3442DV Rev.A  

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