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SI3442DVD84Z PDF预览

SI3442DVD84Z

更新时间: 2024-02-05 13:48:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
7页 74K
描述
Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SI3442DVD84Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):4.1 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3442DVD84Z 数据手册

 浏览型号SI3442DVD84Z的Datasheet PDF文件第1页浏览型号SI3442DVD84Z的Datasheet PDF文件第3页浏览型号SI3442DVD84Z的Datasheet PDF文件第4页浏览型号SI3442DVD84Z的Datasheet PDF文件第5页浏览型号SI3442DVD84Z的Datasheet PDF文件第6页浏览型号SI3442DVD84Z的Datasheet PDF文件第7页 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
VGS = 0 V, ID = 250 µA  
20  
V
Zero Gate Voltage Drain Current  
1
µA  
µA  
nA  
nA  
VDS = 16 V, VGS = 0 V  
TJ = 55oC  
10  
Gate - Body Leakage, Forward  
Gate - Body Leakage, Reverse  
100  
-100  
IGSSF  
IGSSR  
VGS = 8 V, VDS = 0 V  
VGS = -8 V, VDS= 0 V  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
0.4  
0.3  
0.7  
0.5  
1
V
VGS(th)  
V
DS = VGS, ID = 250 µA  
TJ = 125oC  
TJ = 125oC  
0.8  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS = 4.5 V, ID = 4.1 A  
0.039  
0.06  
0.05  
0.06  
0.11  
0.075  
W
VGS = 2.7 V, ID = 3.6 A  
VGS = 4.5 V, VDS = 5 V  
VDS = 4.5 V, ID = 4.1 A  
On-State Drain Current  
15  
A
S
ID(on)  
gFS  
Forward Transconductance  
12  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
365  
230  
95  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
V
DS = 10 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS (Note 2)  
Turn - On Delay Time  
Turn - On Rise Time  
Turn - Off Delay Time  
Turn - Off Fall Time  
Total Gate Charge  
9
25  
28  
8
17  
45  
50  
15  
14  
ns  
ns  
tD(on)  
tr  
tD(off)  
tf  
V
DD = 5 V, ID = 1 A,  
VGEN = 4.5 V, RGEN = 6 W  
ns  
ns  
10  
1
nC  
nC  
nC  
Qg  
Qgs  
Qgd  
VDS = 10 V,  
ID = 4.1 A, VGS = 4.5 V  
Gate-Source Charge  
Gate-Drain Charge  
3.3  
SI3442DV Rev.A  

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