Datasheet > SI3442CDV-T1-GE3

SI3442CDV-T1-GE3

更新时间： 2024-01-08 22:43:37

品牌	Logo	应用领域
威世 - VISHAY		开关光电二极管晶体管
页数	文件大小	规格书
11页	223K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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SI3442CDV-T1-GE3 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	7.67	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	8 A
最大漏极电流 (ID)：	6.6 A	最大漏源导通电阻：	0.027 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	MO-193AA
JESD-30 代码：	R-PDSO-G6	元件数量：	1
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.7 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SI3442CDV-T1-GE3 数据手册

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Revision: 08-Feb-17

Document Number: 91000

1...8 9 1011

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