Datasheet > SHD325589N

SHD325589N

更新时间： 2024-11-26 08:42:23

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	75K
描述
Rectifier Diode, 32A, 1200V V(RRM),

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SHD325589N 数据手册

SHD325589

SHD325589P

SHD325589N

SHD325589D

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5364, REV. -

HERMETIC FAST RECOVERY RECTIFIER

HIGH VOLTAGE

Features:



Low Forward Voltage Drop

Low Power Loss, High Efficiency

Very High Surge Capacity

Very suitable for medium to high frequency applications (upto 40 kHz)

Soft Reverse Recovery at Low and High Temperature

Trr guaranteed lower than 0.5sec

For ceramic seals use part number prefix SHDC

Different Lead-bend options available

Electrically / Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Peak Inverse Voltage

Max. Average Forward

Current

Symbol

V_RWM

I_F(AV)

Condition

50% duty cycle, rectangular wave

Max.

1200

Units

form, T_C= 65 C

Max. Peak One Cycle Non-

Repetitive Surge Current

Thermal Resistance per leg

Max. Junction Temperature

Max. Storage Temperature

I_FSM

8.3 msec, sine pulse, per leg

300

Z_TH

T_J

T_stg

1.40

- 55 to + 150

T_C= 25 C

C / W

C

Electrical Characteristics:

Characteristics

Symbol

Condition

Typ. Max.

Units

Max. Forward Voltage Drop

V_F1

1.15

1.75

1.25

1.85

1.18

1.75

@ 9A, Pulse, T_J= 25 C

@ 32A, Pulse, T_J= 25 C

@ 9A, Pulse, T_J= 125 C

@ 32A, Pulse, T_J= 125 C

@V_R= 1200V, Pulse, T_J= 25 C

@V_R= 1200V, Pulse, T_J= 125 C

I_F= 0.5A; I_RM= 1A, I_RR= 0.25A

T_J= 25 C

V_F2

Max. Reverse Current

I_R1

I_R2

T_RR

A

s

500

0.5

Reverse Recovery Time

Capacitance

0.3

C_J

V_R= 5V, f = 1MHz, V_SIG= 1V

150

Phone (631) 586 7600  Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com

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