Datasheet > SHD220302

SHD220302

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	93K
描述
HERMETIC POWER MOSFET N-CHANNE

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中文翻译

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技术参数
数据手册

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SHD220302 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

SHD220302 数据手册

SENSITRON

SEMICONDUCTOR

SHD220302

TECHNICAL DATA

DATA SHEET 5123, REV. A

HERMETIC POWER MOSFET

N-CHANNEL



200 VOLT, 0.4 OHM, 9.0A MOSFET

Fast Switching

Low R_{DS (on)}

MAXIMUM RATINGS

ALL RATINGS ARE AT T_A= 25C UNLESS OTHERWISE SPECIFIED.

RATING

GATE TO SOURCE VOLTAGE

SYMBOL

V_GS

I_D

I_DM

T_OP/T_STG

MIN.

-55

TYP.

MAX.

20

9.0

UNITS

Volts

Amps

CONTINUOUS DRAIN CURRENT

PULSED DRAIN CURRENT

OPERATING AND STORAGE TEMPERATURE

TERMAL RESISTANCE JUNCTION TO CASE

TOTAL DEVICE DISSIPATION @ T_C= 25C

@ T_C= 25C

Amps(pk)

+150

1.27

C

C/W

Watts

R_JC

P_D

ELECTRICAL CHARACTERISTICS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

BV_DSS

V_GS(th)

R_DS(ON)

200

Volts

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 250A

DRAIN TO SOURCE ON STATE RESISTANCE

V_GS= 10Vdc, I_D= 6.0A

I_D= 9.0A

2.0

4.0

GATE THRESHOLD VOLTAGE

0.4

0.49



ZERO GATE VOLTAGE DRAIN CURRENT

V_DS= 0.8xMax. Rating, V_GS= 0Vdc

V_DS= 0.8xMax. Rating

I_DSS

A

250

V_GS= 0Vdc, T_J= 125C

I_GSS

GATE TO BODY LEAKAGE CURRENT

V_GS= 20Vdc,

100

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE V_DS= 0.5V Max. Rating,

V_GS= 10 Vdc

Q_g

Q_gs

Q_gd

t_d(ON)

t_r

3.0

5.5

5.7

GATE TO DRAIN CHARGE

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

I_D= 9.0A

V_DD= 100V,

I_D= 9.0A,

R_G= 7.5

V_GS= 10V

nsec

t_d(OFF)

t_f

V_SD

t_rr

1.4

500

Volts

nsec

FORWARD VOLTAGE T_J= 125C, I_S= 9.0A, V_GS= 0V

REVERSE RECOVERY TIME

I_S= 9.0A,

di/dt  100A/sec,

V_DD 50V

REVERSE RECOVERY CHARGE

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

V_DS= 25 Vdc,

V_GS= 0 Vdc,

f = 1 MHz

C_iss

C_oss

C_rss

600

250

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