Datasheet > SHD126134_08

SHD126134_08

更新时间： 2024-11-09 09:26:43

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描述
SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature

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SHD126134_08 数据手册

SHD126134

SHD126134P

SHD126134N

SHD126134D

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 4754, REV. B

SILICON SCHOTTKY RECTIFIER

Ultra Low Reverse Leakage

200°C Operating Temperature

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Ultra low Reverse Leakage Current

Soft Reverse Recovery at Low and High Temperature

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

•

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings:

Characteristics

Peak Inverse Voltage

Max. Average Forward Current

Symbol

V_RWM

I_F(AV)

Condition

Maximum DC Output Current

(@ T_C=100 ^OC) (Single,

Doubler)

Max.

100

7.5

Units

Max. Average Forward Current

I_F(AV)

Maximum DC Output Current

(@ T_C=100 ^OC) (Common

Cathode, Common Anode)

8.3 ms, half Sine wave

Max. Peak One Cycle Non-

Repetitive Surge Current

Maximun Thermal Resistence

(Single)

Maximun Thermal Resistence

(Common Cathode, Common

Anode, Doubler)

I_FSM

R_θJC

2.71

1.36

°C/W

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics Per Leg:

Characteristics

Max. Forward Voltage Drop

Symbol

Condition

@ 7.5 A, Pulse, T_J= 25 °C

@ 7.5 A, Pulse, T_J= 125 °C

@V_R= 100 V, Pulse,

T_J= 25 °C

Max.

0.93

0.77

0.05

Units

V_F1

V_F2

I_R1

Max. Reverse Current

I_R2

C_T

@V_R= 100 V, Pulse,

T_J= 125 °C

0.5

Max. Junction Capacitance

250

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •

• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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