SHD126136
SHD126136P
SHD126136N
SHD126136D
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 310, REV. A
SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
200°C Operating Temperature
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Out Performs 200 Volt Ultrafast Rectifiers
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Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
Max.
200
7.5
Units
V
A
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
50% duty cycle, rectangular
wave form
IFSM
EAS
IAR
8.3 ms, half Sine wave (1)
140
7.7
0.4
A
mJ
A
TJ = 25 °C, IAS = 0.23A,
L = 130 mH
AS decay linearly to 0 in 1 µs
Repetitive Avalanche Current
I
ƒ limited by TJ max VA=1.5VR
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-
-
-65 to +200
-65 to +200
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
@ 3A, Pulse, TJ = 25 °C
@ 3A, Pulse, TJ = 125 °C
@VR = 100V, Pulse,
TJ = 25 °C
Max.
0.92
0.76
.05
Units
V
V
VF2
IR1
Max. Reverse Current
mA
IR2
CT
@VR = 100V, Pulse,
TJ = 125 °C
0.5
mA
pF
Max. Junction Capacitance
150
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max. Reverse Recovery Time
(1) in SHD package
trr
IF = 0.5A, IR = 1.0A,
12
nsec
IRM = 0.25 A, TJ = 25°C
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