Datasheet > SHD126136_0609

SHD126136_0609

更新时间： 2024-09-23 09:26:43

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页数	文件大小	规格书
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描述
SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 200°C Operating Temperature

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中文翻译

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数据手册

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SHD126136_0609 数据手册

SHD126136

SHD126136P

SHD126136N

SHD126136D

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 310, REV. A

SCHOTTKY RECTIFIER

Ultra Low Reverse Leakage

200°C Operating Temperature

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Ultra low Reverse Leakage Current

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Out Performs 200 Volt Ultrafast Rectifiers

•

Maximum Ratings:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

7.5

Units

Peak Inverse Voltage

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

50% duty cycle, rectangular

wave form

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave ⁽¹⁾

140

7.7

0.4

T_J= 25 °C, I_AS= 0.23A,

L = 130 mH

_ASdecay linearly to 0 in 1 µs

Repetitive Avalanche Current

ƒ limited by T_Jmax V_A=1.5V_R

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

@ 3A, Pulse, T_J= 25 °C

@ 3A, Pulse, T_J= 125 °C

@V_R= 100V, Pulse,

T_J= 25 °C

Max.

0.92

0.76

.05

Units

V_F2

I_R1

Max. Reverse Current

I_R2

C_T

@V_R= 100V, Pulse,

T_J= 125 °C

0.5

Max. Junction Capacitance

150

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

Max. Reverse Recovery Time

(1) in SHD package

t_rr

I_F= 0.5A, I_R= 1.0A,

nsec

I_RM= 0.25 A, T_J= 25°C

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