Datasheet > SH2102WN (新产品)

SH2102WN (新产品)

更新时间： 2024-11-12 11:08:11

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罗姆 - ROHM		/
页数	文件大小	规格书
4页	1299K
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SH2102WN (新产品) 数据手册

SH2102WN

650V 50A Fast Recovery Diode

Datasheet

lOutline

Wafer (W05)

Unsawn on foil (U03)

V_RM

I_{F (Nominal)}

650V

50A

V_{F (Typ.)}

1.45V

1976pcs

Notch side

Max. Possible Chips per Wafer

lFeatures

lInner Circuit

1) Light Punch Through Type

2) Low Forward Voltage

3) Very Fast & Soft Recovery

4) Low Recovery Loss

(1)

(1) Anode

(2) Cathode

(2)

lApplication

Free Wheeling

lAbsolute Maximum Ratings

Parameter

Repetitive Peak Reverse Voltage, T_j= 25°C

Forward Current

Symbol

Value

Unit

V_RM

650

*1)

I_F

Pulsed Forward Current

200

I_FP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

lElectrical Characteristics (at T_j= 25°C unless otherwise specified, in case of TO-247N package)

Values

Parameter

Breakdown Voltage

Reverse Current

Symbol

Conditions

Unit

Min.

650

Typ.

Max.

I_R= 10μA

I_R

V_R= 650V

μA

I_F= 50A,

T_j= 25°C

T_j= 175°C

Forward Voltage

1.45

1.55

1.9

V_F

*3 Design assurance without measurement

www.rohm.com

2022.06 - Rev.A

1/2

12 3 4

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