Datasheet > SGT6920NH

SGT6920NH

更新时间： 2024-11-19 01:21:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	123K
描述
Dual-N Enhancement Mode MOSFET

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SGT6920NH 数据手册

SGT6920NH

6.8 A, 20 V, R_DS(ON)22 mΩ

Dual-N Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

TSSOP-8

DESCRIPTION

These miniature surface mount MOSFETs utilize a High

Cell Density trench process to provide Low R_DS(on)and ensure

minimal power loss and heat dissipation. Typical applications

are DC-DC converters and power management in portable and

battery-powered products such as computers, printer , PCMCIA

cards, cellular and cordless telephones.

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends

battery life.

ꢀ

Low thermal impedance copper leadframe TSSOP-8

saves board space.

ꢀ

Fast switching speed.

High performance trench technology.

Millimeter

REF.

Min.

Max.

3.10

6.60

1.20

4.50

1.15

1.10

Min.

0.45

0.19

Max.

0.75

0.30

2.80

6.20

1.00

4.30

0.65 REF.

0.05

0.15

0.127 REF

PACKAGE INFORMATION

0.9

Package

MPQ

Leader Size

Top View

TSSOP-8L

13’ inch

ABSOLUTE MAXIMUM RATINGS(T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±8

6.8

T_A=25°C

T_A=70°C

Continuous Drain Current ¹

I_D

5.4

Pulsed Drain Current ²

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

1.5

1.2

0.8

T_A=25°C

T_A=70°C

°C

P_D

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

Thermal Resistance Rating

t ≦ 10 sec

Maximum Junction to Ambient ¹

Notes:

R_θ

°C / W

Steady State

120

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

23-Jan-2013 Rev. A

Page 1 of 2

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