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SGM48510 PDF预览

SGM48510

更新时间: 2023-09-03 20:28:09
品牌 Logo 应用领域
圣邦微 - SGMICRO /
页数 文件大小 规格书
14页 793K
描述
11A High-Speed Low-Side MOSFET Driver

SGM48510 数据手册

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11A High-Speed  
SGM48510  
Low-Side MOSFET Driver  
PACKAGE/ORDERING INFORMATION  
SPECIFIED  
TEMPERATURE  
RANGE  
PACKAGE  
DESCRIPTION  
ORDERING  
NUMBER  
PACKAGE  
MARKING  
PACKING  
OPTION  
MODEL  
MBZ  
XXXX  
SGM  
48510XS8  
XXXXX  
TDFN-2×2-8AL  
SOIC-8  
SGM48510XTDE8G/TR  
Tape and Reel, 3000  
Tape and Reel, 4000  
-40to +125℃  
SGM48510  
SGM48510XS8G/TR  
-40to +125℃  
MARKING INFORMATION  
NOTE: XXXX = Date Code, Trace Code and Vendor Code. XXXXX = Date Code, Trace Code and Vendor Code.  
TDFN-2×2-8AL  
SOIC-8  
X X X X X  
Serial Number  
Y Y Y  
X X X X  
Vendor Code  
Trace Code  
Vendor Code  
Trace Code  
Date Code - Year  
Date Code - Year  
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If  
you have additional comments or questions, please contact your SGMICRO representative directly.  
OVERSTRESS CAUTION  
ABSOLUTE MAXIMUM RATINGS  
Stresses beyond those listed in Absolute Maximum Ratings  
may cause permanent damage to the device. Exposure to  
absolute maximum rating conditions for extended periods  
may affect reliability. Functional operation of the device at any  
conditions beyond those indicated in the Recommended  
Operating Conditions section is not implied.  
Supply Voltage, VDD........................................... -0.3V to 28V  
Output Current (DC), IOUT_DC...........................................0.6A  
Output Current (1), IOUT_PULSE ............................................11A  
Input Voltages, VIN+, VIN- ....................................... -6V to 24V  
Output Voltages, VOUTH, VOUTL .................-0.3V to VDD + 0.3V  
Output Voltages (Pulse < 0.5µs), VOUTH, VOUTL  
.................................................................-3.0V to VDD + 3.0V  
Package Thermal Resistance  
ESD SENSITIVITY CAUTION  
TDFN-2×2-8AL, θJA.................................................... 63/W  
SOIC-8, θJA .............................................................. 131/W  
Junction Temperature.................................................+150℃  
Storage Temperature Range.......................-65to +150℃  
Lead Temperature (Soldering, 10s)............................+260℃  
ESD Susceptibility  
This integrated circuit can be damaged if ESD protections are  
not considered carefully. SGMICRO recommends that all  
integrated circuits be handled with appropriate precautions.  
Failureto observe proper handlingand installation procedures  
can cause damage. ESD damage can range from subtle  
performance degradation tocomplete device failure. Precision  
integrated circuits may be more susceptible to damage  
because even small parametric changes could cause the  
device not to meet the published specifications.  
HBM.............................................................................3000V  
CDM ............................................................................1000V  
RECOMMENDED OPERATING CONDITIONS  
Supply Voltage, VDD.............................................4.5V to 24V  
Input Voltages, VIN+, VIN- ....................................... -5V to 24V  
Operating Junction Temperature Range......-40to +125℃  
DISCLAIMER  
SG Micro Corp reserves the right to make any change in  
circuit design, or specifications without prior notice.  
NOTE:  
1. A 1μF load is connected from OUT (OUTH shorted to  
OUTL) to GND with 1kHz square wave input.  
SG Micro Corp  
www.sg-micro.com  
DECEMBER 2022  
2

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