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SGM48521 PDF预览

SGM48521

更新时间: 2024-03-03 10:09:16
品牌 Logo 应用领域
圣邦微 - SGMICRO /
页数 文件大小 规格书
7页 435K
描述
5V, 7A/6A Low-Side GaN and MOSFET Driver with 1ns Pulse Width

SGM48521 数据手册

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SGM48521  
5V, 7A/6A Low-Side GaN and  
MOSFET Driver with 1ns Pulse Width  
GENERAL DESCRIPTION  
FEATURES  
The high-speed, single-channel low-side driver  
SGM48521 is designed to drive GaN FETs and logic  
level MOSFETs. Application areas include LiDAR, time  
of flight, facial recognition, and power converters using  
low-side drivers. The SGM48521 provides 7A source  
and 6A sink output current capability. Split output  
configuration allows individual turn-on and turn-off time  
optimization depending on FET. Package and pinout  
with minimum parasitic inductances reduce the rise and  
fall time and limit the ringing. Additionally, the 2.2ns  
propagation delay with minimized tolerances and  
variations allows efficient operation at high frequencies.  
5V Supply Voltage  
7A Peak Source and 6A Peak Sink Currents  
Ultra-Fast, Low-side Gate Driver for GaN and Si  
FETs  
Minimum Input Pulse Width: 1ns  
Up to 60MHz Operation  
Propagation Delay: 2.2ns (TYP), 3.6ns (MAX)  
Rise Time:  
WLCSP-0.88×1.28-6B: 640ps (TYP)  
TDFN-2×2-6AL: 620ps (TYP)  
Fall Time:  
WLCSP-0.88×1.28-6B: 560ps (TYP)  
TDFN-2×2-6AL: 610ps (TYP)  
Protection Features:  
Under-Voltage Lockout (UVLO)  
Over-Temperature Protection (OTP)  
Available in Green WLCSP-0.88×1.28-6B and  
TDFN-2×2-6AL Packages  
The driver has internal under-voltage lockout and  
over-temperature protection against overload and fault  
events.  
The SGM48521 is available in Green WLCSP-0.88×  
1.28-6B and TDFN-2×2-6AL packages.  
APPLICATIONS  
Laser Distance Measuring System  
5G RF Communication System  
Wireless Charging System  
GaN DC/DC Conversion System  
TYPICAL APPLICATION  
VBUS  
R1  
5V  
VDD  
IN+  
IN-  
OUTH  
SGM48521  
GaN  
R2  
PWM  
nEN  
OUTL  
GND  
Figure 1. Typical Application Circuit  
SG Micro Corp  
www.sg-micro.com  
JULY 2023 – REV. A. 1  

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