Datasheet > SGM2301

SGM2301

更新时间： 2024-01-30 05:52:41

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	349K
描述
P-Channel Enhancement Mode Power Mos.FET

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SGM2301 数据手册

SGM2301

-2.6A, -20V,RDS(ON) 130m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SOT-89

The SGM2301 provides the designer with the best

combination of fast switching, low on-resistance

and cost-effectiveness. The SGM2301 is universally

preferred for all commercial-industrial surface mount

applications and suited for low voltage applications

such as DC/DC converters.

Features

* Surface Mount Device

* Simple Drive Requirement

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-20

±12

-2.6

-2.1

-10

Gate-Source Voltage

VGS

Continuous Drain Current³

Pulsed Drain Current^1,2

ID@TA=25^oC

ID@TA=70 ^o

IDM

PD@TA=25^o

1.38

0.01

Total Power Dissipation

W/^oC

Linear Derating Factor

^oC

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

Max.

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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