Datasheet > SGM2306

SGM2306

更新时间： 2024-02-17 11:54:21

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	482K
描述
N-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SGM2306 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.82

SGM2306 数据手册

SGM2306

5.3A, 20V,RDS(ON) 32m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-89

Description

The SGM2306 utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.The SGM2306 is

universally used for all commercial-industrial applications.

Features

* Capable Of 2.5V Gate Drive

* Lower On-Resistance

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±12

5.3

4.3

Gate-Source Voltage

VGS

ID@TA=25 ^o

Continuous Drain Current, VGS@4.5V

ID@TA=70^o

Continuous Drain Current, VGS@4.5V

Pulsed Drain Current^1,2

IDM

Total Power Dissipation

PD@TA=25^o

1.5

0.012

W/^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient ³

83.3

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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