Datasheet > SGM2501

SGM2501

更新时间： 2024-09-27 06:11:27

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	420K
描述
P-Channel Enhancement Mode Power Mos.FET

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中文翻译

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技术参数
数据手册

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SGM2501 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

SGM2501 数据手册

SGM2501

-2.6A, -20V,RDS(ON) 200m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SOT-89

The SGM2301 provides the designer with the best

combination of fast switching, low on-resistance

and cost-effectiveness. The SOT-89 package is

universally preferred for all commercial-industrial

applications and suited for low

surface mount

voltage and battery power applications.

Features

* Surface Mount Device

* Simple Drive Requirement

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-20

±12

-2.6

-2.1

Gate-Source Voltage

VGS

Continuous Drain Current³

Pulsed Drain Current^1,2

ID@TA=25^oC

ID@TA=70 ^o

IDM

-10

1.5

PD@TA=25^o

Total Power Dissipation

0.012

-55~+150

W/^oC

Linear Derating Factor

^oC

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

83.3

Max.

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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