Datasheet > SGM2308

SGM2308

更新时间： 2024-09-30 09:27:11

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	379K
描述
N-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SGM2308 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

SGM2308 数据手册

SGM2308

3A, 60V,RDS(ON) 160m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SOT-89

The SGM2308 utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The SGM2308 is universally used for all commercial-

industrial surface mount applications.

Features

* Simple Drive Requirement

* Small Package Outline

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

±20

3.0

2.3

Gate-Source Voltage

VGS

Continuous Drain Current³, VGS @4.5V

ID@TA=25^oC

^oC

Continuous Drain Current, VGS @4.5V

ID@TA=70

Pulsed Drain Current^1,2

IDM

^oC

Total Power Dissipation

PD@TA=25

1.5

0.01

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³

83.3

Rthj-a

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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