Datasheet > 晶体管 > IGBT> SGH80N60

SGH80N60

更新时间： 2024-11-20 22:07:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
7页	560K
描述
Ultra-Fast IGBT

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中文翻译

获取价格

数据手册

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SGH80N60 数据手册

IGBT

SGH80N60UF

Ultra-Fast IGBT

General Description

Features

Fairchild's UF series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UF series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

•

High speed switching

Low saturation voltage : V

High input impedance

= 2.1 V @ I = 40A

CE(sat)

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-3P

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

SGH80N60UF

Units

Collector-Emitter Voltage

600

± 20

CES

GES

Gate-Emitter Voltage

Collector Current

@ T

25°C

Collector Current

@ T = 100°C

Pulsed Collector Current

220

CM (1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

@ T = 100°C

280

@ T

25°C

195

°C

@ T = 100°C

-55 to +150

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

°C/W

Thermal Resistance, Junction-to-Case

0.64

θJC

θJA

Thermal Resistance, Junction-to-Ambient

SGH80N60UF Rev. A1

12 3 4 5 6 7

中文翻译

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