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SGA-9189 PDF预览

SGA-9189

更新时间: 2024-01-04 22:14:20
品牌 Logo 应用领域
STANFORD 射频微波
页数 文件大小 规格书
5页 451K
描述
Reliability Qualification Report

SGA-9189 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:5A991.G
HTS代码:8542.33.00.01风险等级:5.12
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:11.2 dB
JESD-609代码:e3最大工作频率:3000 MHz
最小工作频率:50 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
端子面层:Matte Tin (Sn)Base Number Matches:1

SGA-9189 数据手册

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SGA-9189 Reliability Qualification Report  
Operational and Accelerated Life Testing  
The purpose of the operational life test is to statistically show that the product operated at  
125oC will be reliable. This is accomplished by operating several hundred devices for a  
total test time of 1000 hours. The results for this test are expressed in device hours which  
are calculated by multiplying the total number of devices passing by the number of hours  
tested.  
Operational Life Test Results  
The results for SGA-9189 High Temperature Operating Life Test are as follows:  
Group  
Test Time Quantity Quantity  
Out  
Device  
Hours  
(hours)  
In  
A2  
1000  
189  
189  
189,000  
Table 2: High Temperature Operational Life Test Results  
Accelerated Life Test Results  
The following data demonstrates the results from accelerated life tests performed on the  
Stanford 4A SiGe HBT Process. The test was performed on 77 units running at a peak  
junction temperature of 195oC. The test exceeded 10,000 hours (1.14 years) with no  
failures. The FIT rate / MTTF calculation can be found below. The FIT rates were  
generated assuming 1 failure. In reality, there were no failures, making this a very  
conservative calculation.  
Stanford Microdevices Process 4ASiGe HBT  
FIT Rate / MTTF Calculation  
SGA Series Devices  
Parameters  
*Ea = 0.7 eV  
Junction Temp C FIT Rate MTTF (hrs)  
55  
125  
0.053  
4.136  
1.89E+10  
2.42E+08  
*The Ea of 0.7eV is conservative, 0.85eV is the activation energy for electomigration which is assumed to be the primary failure mechanism for  
the SiGe process.  
**Stanford Microdevices does not assume any liability arising from the use of this data.  

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