SG6508J

更新时间： 2024-10-28 13:13:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
5页	68K
描述
Rectifier Diode, 16 Element, 0.5A, Silicon, CERAMIC, DIP-14

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技术参数
数据手册

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SG6508J 技术参数

生命周期：	Obsolete	零件包装代码：	DIP
包装说明：	R-CDIP-T14	针数：	14
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.75
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
配置：	COMPLEX	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-CDIP-T14
元件数量：	16	端子数量：	14
最大输出电流：	0.5 A	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	IN-LINE
认证状态：	Not Qualified	最大反向恢复时间：	0.02 µs
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	DUAL	Base Number Matches：	1

SG6508J 数据手册

SG5768, SG5770, SG5772, SG5774

SG6506/SG6507/SG6508/SG6509

DIODE ARRAY CIRCUITS

DESCRIPTION

FEATURES

The Linfinity series of diode arrays feature high breakdown, high speed

diodes in a variety of configurations.

• 60V minimum breakdown voltage

• 500mA current capability per diode

• Fast switching speeds: typically less than

10ns

Each array configuration consists of either common anode diodes,

common cathode diodes, or a combination of common anode and

common cathode diodes.

• Low leakage current

HIGH RELIABILITY FEATURES

Individual diodes within the array have 60V minimum breakdown

voltage, can handle 500mA of current and typically switch in less than

10 nanoseconds.

♦ MIL-S-19500/474 QPL - 1N5768 - 1N6506

- 1N5770 - 1N6507

- 1N5772 - 1N6508

Each of the array configurations is available in ceramic DIP or ceramic

flatpack and can be processed to JANTXV, JANTX, or JAN flows at

Linfinity’s MIL-S-19500 facility.

- 1N5774 - 1N6509

♦ JANTXV, JANTX & JAN available

♦ LMI level "S" processing available

CIRCUIT DIAGRAMS

COMMON CATHODE

SG5768/SG6506

COMMON ANODE

SG5770/SG6507

COMMON ANODE / COMMON CATHODE

SG5772/SG6508

DUAL COMMON ANODE / COMMON CATHODE

SG5774/SG6509

6/90 Rev 1.1 2/94

LINFINITY Microelectronics Inc.

11861 Western Avenue ∞ Garden Grove, CA 92841

(714) 898-8121 ∞ FAX: (714) 893-2570

12 3 4 5

中文翻译

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