Datasheet > SG50N06T

SG50N06T

更新时间： 2022-04-06 15:46:39

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	108K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG50N06T 数据手册

SG50N06T, SG50N06DT

Discrete IGBTs

=25^o

C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Unit

min.

typ.

max.

gts

C=IC90; VCE=10V

Pulse test, t 300us, duty cycle 2%

ies

4000

340

100

110

oes

CE=25V; VGE=0V; f=1MHz

res

180

IC=IC90; VGE=15V; VCE=0.5VCES

100

d(on)

d(off)

off

d(on)

Inductive load, T

=25^o

C=IC90; VGE=15V

CE=0.8VCES; R =Roff=2.7

200

150

3.0

300

270

6.0

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

Inductive load, T C

=25^o

C=IC90; VGE=15V

CE=0.8VCES; R

=Roff=2.7

d(off)

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

280

250

4.2

off

K/W

thJC

0.62

thCK

0.25

=25^o

C, unless otherwise specified)

Reverse Diode (FRED)

Symbol

Characteristic Values

Test Conditions

Unit

min.

typ.

max.

F=IC90; VGE=0V;

2.5

Pulse test; t 300ms, duty cycle 22%

=IC90; VGE=0V; -di /dt=100A/ms

=100V;

=1A; -di/dt=200A/ms; V

2.5

175

R=30V

thJC

0.65

K/W

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