Datasheet > SG276

SG276

更新时间： 2024-12-01 09:27:47

品牌	Logo	应用领域
可天士 - KODENSHI		光电断路器
页数	文件大小	规格书
2页	106K
描述
PhotoInterrupter(Transimissive)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SG276 数据手册

PhotoInterrupter(Transimissive)

SG276

DIMENSIONS

(Unit : mm)

The SG276 photointerrupter high-performance standard

type,combines high-output GaAs IRED with high sensitive

phototransistor

FEATURES

▪ PWB direct mount type

▪ GAP : 3.3mm

▪ With the installation positioning boss

▪ Compact

APPLICATIONS

▪ VTR

▪ Cassette mecha

▪ Car stereo

▪ Printers

MAXIMUM RATINGS

(Ta=25°C)

Item

Symbol

P_D

Rating

Unit

Power dissipation

Forward current

Reverse voltage

I_F

Input

V_R

Pulse forward current ^*1

I_FP

0.5

Collector power dissipation

P_C

I_C

Collector current

Output

V_CEO

V_ECO

Topr.

Tstg.

Tsol.

Collector-Emitter voltage

Emitter-Collector voltage

Operating temp.^*2

Storage temp.^*2

Soldering temp.^*3

-20 ~ +85

-30 ~ +85

260

°C

*1. Pulse width : tw≤100us. period T=10ms

*2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the resin edge.

ELECTRO-OPTICAL CHARACTERISTICS

(Ta=25°C)

Item

Conditions

I_F=20mA

Symbol

Min. Typ. Max. Unit.

V_F

I_R

Forward voltage

Reverse current

Peak wavelength

1.2

1.4

µA

V_R=5V

Input

I_F=20mA

λ_p

940

V_CE=10V,0 lx

I_CEO

I_C

Output Collector dark current

Light current

100

I_F=20mA,V_CE=5V (Non-Shading)

I_F=20mA,V_CE=5V (Shading)

I_F=20mA,I_C=0.05mA

0.2

Trans-

mission

I_CEOD

V_CE(sat)

Leakage current

0.5

0.15

0.4

C-E saturation voltage

Rise time

µs

V_CC=5V,I_C=0.1mA,R_L=1kΩ

Fall time

- 1 -

中文翻译

下载PDF

与SG276相关器件

型号	品牌	获取价格	描述	数据表
SG277	KODENSHI	获取价格	PhotoInterrupter(Transimissive)
SG278	KODENSHI	获取价格	PhotoInterrupter(Transimissive)
SG27N	ETC	获取价格
SG2800	MICROSEMI	获取价格	HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
SG2800_1	MICROSEMI	获取价格	HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
SG2801	MICROSEMI	获取价格	HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
SG2801J	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI
SG2801J/883B	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI
SG2801L	MICROSEMI	获取价格	暂无描述
SG2801L/883B	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI