是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | LCC |
包装说明: | HERMETIC SEALED, CERAMIC, LCC-20 | 针数: | 20 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.25 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 50 V |
配置: | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 1000 |
JESD-30 代码: | S-CQCC-N20 | JESD-609代码: | e0 |
元件数量: | 8 | 端子数量: | 20 |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SG2803N | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
SG2804 | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
SG2804 | MICROCHIP |
获取价格 |
The SG2800 series integrates eight NPN Darlington pairs with internal suppression diodes t | |
SG2804J | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI | |
SG2804J/883B | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI | |
SG2804L | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI | |
SG2804L/883B | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, HERMETI | |
SG2805J/883B | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal | |
SG2805L | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal | |
SG2805L/883B | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal |