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SG2003J PDF预览

SG2003J

更新时间: 2024-11-26 22:21:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体驱动器小信号双极晶体管高压
页数 文件大小 规格书
7页 104K
描述
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS

SG2003J 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:DIP-16
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.85Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):1000
JESD-30 代码:R-CDIP-T16JESD-609代码:e0
元件数量:7端子数量:16
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONVCEsat-Max:1.6 V
Base Number Matches:1

SG2003J 数据手册

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SG2000 SERIES  
HIGH VOLTAGE MEDIUM  
CURRENT DRIVER ARRAYS  
DESCRIPTION  
FEATURES  
The SG2000 series integrates seven NPN Darlington pairs with  
internal suppression diodes to drive lamps, relays, and solenoids in  
many military, aerospace, and industrial applications that require  
severe environments. All units feature open collector outputs with  
greater than 50V breakdown voltages combined with 500mA  
current carrying capabilities. Five different input configurations  
provide optimized designs for interfacing with DTL, TTL, PMOS, or  
CMOS drive signals. These devices are designed to operate from  
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic  
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic  
dual in–line (N) is designed to operate over the commercial  
temperature range of 0°C to 70°C.  
Seven npn Darlington pairs  
-55°C to 125°C ambient operating temperature range  
Collector currents to 600mA  
Output voltages from 50V to 95V  
Internal clamping diodes for inductive loads  
DTL, TTL, PMOS, or CMOS compatible inputs  
Hermetic ceramic package  
HIGH RELIABILITY FEATURES  
Available to MIL-STD-883 and DESC SMD  
MIL-M38510/14101BEA - JAN2001J  
MIL-M38510/14102BEA - JAN2002J  
MIL-M38510/14103BEA - JAN2003J  
MIL-M38510/14104BEA - JAN2004J  
Radiation data available  
LMI level "S" processing available  
PARTIAL SCHEMATICS  
4/90 Rev 1.3 6/97  
LINFINITY Microelectronics Inc.  
Copyright 1997  
11861 Western Avenue Garden Grove, CA 92841  
1
(714) 898-8121 FAX: (714) 893-2570  

SG2003J 替代型号

型号 品牌 替代类型 描述 数据表
SG2003N MICROSEMI

完全替代

HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
SG2003J/883B MICROSEMI

类似代替

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon,
SG2003L/883B MICROSEMI

功能相似

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, HERMETI

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