是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | QCCN, LCC20,.35SQ | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.7 | 高边驱动器: | NO |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | S-GQCC-N20 |
JESD-609代码: | e0 | 长度: | 8.89 mm |
功能数量: | 2 | 端子数量: | 20 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
标称输出峰值电流: | 3 A | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | QCCN | 封装等效代码: | LCC20,.35SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 4.5/20 V |
认证状态: | Not Qualified | 筛选级别: | 38535Q/M;38534H;883B |
座面最大高度: | 2.286 mm | 子类别: | MOSFET Drivers |
最大供电电压: | 20 V | 最小供电电压: | 4.5 V |
标称供电电压: | 15 V | 表面贴装: | YES |
技术: | BIPOLAR | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.04 µs |
接通时间: | 0.05 µs | 宽度: | 8.89 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SG1626R | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626R/883B | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626R/DESC | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626T | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626T/883B | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626T/DESC | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626T-DESC | MICROSEMI |
获取价格 |
Buffer/Inverter Based MOSFET Driver, 3A, BIPolar, MBCY8, METAL CAN, TO-99, 8 PIN | |
SG1626Y | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626Y/883B | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER | |
SG1626Y/DESC | MICROSEMI |
获取价格 |
DUAL HIGH SPEED DRIVER |