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SFT5151S.5UBS PDF预览

SFT5151S.5UBS

更新时间: 2024-01-06 00:21:08
品牌 Logo 应用领域
SSDI 开关晶体管
页数 文件大小 规格书
3页 161K
描述
Power Bipolar Transistor

SFT5151S.5UBS 技术参数

生命周期:Active包装说明:CHIP CARRIER, R-XBCC-N3
Reach Compliance Code:compliant风险等级:5.59
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
基于收集器的最大容量:250 pF集电极-发射极最大电压:80 V
配置:Single最小直流电流增益 (hFE):20
最大降落时间(tf):500 nsJESD-30 代码:R-XBCC-N3
元件数量:1端子数量:3
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:PNP
最大功率耗散 (Abs):10 W参考标准:MIL-19500
最大上升时间(tr):1500 ns表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHz最大关闭时间(toff):1900 ns
最大开启时间(吨):2000 nsVCEsat-Max:1.5 V
Base Number Matches:1

SFT5151S.5UBS 数据手册

 浏览型号SFT5151S.5UBS的Datasheet PDF文件第2页浏览型号SFT5151S.5UBS的Datasheet PDF文件第3页 
SFT5151 and SFT5153  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
10 AMP  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
POWER TRANSISTORS  
SILICON PNP  
SFT5151 __ __ __  
SFT5153 __ __ __  
100 VOLTS  
10 WATTS  
Screening 2/ __ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Radiation Tolerant  
Lead Bend Options  
__ = Straight  
Fast Switching, 500 nsec max ton  
High Frequency, Typical ft = 85 MHz  
BVCEO 80 Volts Min  
High Linear Gain, Low Saturation Voltage  
200°C Operating Temperature  
Designed for Complementary Use with SFT5152 and  
SFT5154  
UB = Up Bend  
DB = Down Bend  
Package 3/  
J = TO-257  
/5 = TO-5  
Replacement for 2N5151 and 2N5153  
G = Cerpack  
S.5 = SMD.5  
TX, TXV, S-Level Screening Available2/ - Consult Factory  
Maximum Ratings  
Symbol  
Value  
Units  
Collector – Emitter Voltage  
Collector – Base Voltage  
Emitter – Base Voltage  
Collector Current  
VCEO  
80  
Volts  
VCBO  
VEBO  
IC  
100  
5.5  
10  
Volts  
Volts  
Amps  
Amps  
Base Current  
IB  
2.5  
Total Device Dissipation @ TC = 50°C  
Derate above 50°C  
10  
66.6  
W
mW/°C  
PD  
Operating & Storage Temperature  
Top & Tstg  
-65 to +200  
°C  
TO-257 (J)  
TO-5 (/5)  
Cerpack (G)  
SMD.5 (S.5)  
5
10  
3
Maximum Thermal Resistance  
Junction to Case  
RθJC  
°C/W  
3
NOTES:  
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%  
TO-257 (J)  
TO-5 (/5)  
Cerpack (G) SMD.5 (S.5)  
1/ For ordering information, price, operating curves, and  
availability, contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows  
available on request.  
3/ For package outlines contact factory.  
4/ Unless otherwise specified, all electrical characteristics  
@25°C.  
Available parts:  
SFT5151J, SFT5151/5, SFT5151G, SFT5151S.5  
SFT5153J, SFT5153/5, SFT5153G, SFT5153S.5  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0109D  
DOC  

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