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SFT1431-E PDF预览

SFT1431-E

更新时间: 2024-11-07 01:06:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 359K
描述
Power MOSFET

SFT1431-E 数据手册

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Ordering number : ENA1624B  
SFT1431  
Power MOSFET  
35V, 25m,11A, Single N-Channel  
http://onsemi.com  
Electrical Connection  
Features  
N-Channel  
Low On-Resistance  
High Speed Switching  
Low Gate Charge  
ESD Diode-Protected Gate  
Pb-free and RoHS Compliance  
2,4  
1
Specifications  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
V
3
Drain to Source Voltage  
V
DSS  
35  
±20  
11  
V
Gate to Source Voltage  
Drain Current (DC)  
V
GSS  
Packing Type:TL  
Marking  
A
I
I
D
Drain Current  
44  
A
DP  
T1431  
PW10μs, duty cycle1%  
1.0  
15  
W
W
Power Dissipation  
P
D
LOT No.  
TL  
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
4
4
Thermal Resistance Ratings  
Parameter  
2
1
Symbol  
Value  
8.33  
125  
Unit  
3
1
Junction to Case Steady State  
Junction to Ambient *1  
R
R
θJC  
IPAK(TP)  
DPAK(TP-FA)  
2
°C/W  
3
θJA  
Note : *1 Insertion mounted  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of this data sheet.  
Semiconductor Components Industries, LLC, 2014  
September, 2014  
91014 TKIM TC-00003150/60612 TKIM/D0209PA TKIM TC-00002143 No.A1624-1/6  

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