Datasheet > SFT1431-E

SFT1431-E

更新时间： 2024-11-10 01:06:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	359K
描述
Power MOSFET

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中文翻译

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数据手册

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SFT1431-E 数据手册

Ordering number : ENA1624B

SFT1431

Power MOSFET

35V, 25mΩ,11A, Single N-Channel

http://onsemi.com

Electrical Connection

Features

N-Channel

• Low On-Resistance

• High Speed Switching

• Low Gate Charge

• ESD Diode-Protected Gate

• Pb-free and RoHS Compliance

2,4

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

±20

Gate to Source Voltage

Drain Current (DC)

GSS

Packing Type:TL

Marking

Drain Current

T1431

PW≤10μs, duty cycle≤1%

1.0

Power Dissipation

LOT No.

Tc=25°C

Junction Temperature

Storage Temperature

150

°C

Tstg

−55 to +150

Thermal Resistance Ratings

Parameter

Symbol

Value

8.33

125

Unit

Junction to Case Steady State

Junction to Ambient *¹

θJC

IPAK(TP)

DPAK(TP-FA)

°C/W

θJA

Note : *¹Insertion mounted

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2014

September, 2014

91014 TKIM TC-00003150/60612 TKIM/D0209PA TKIM TC-00002143 No.A1624-1/6

12 3 4 5 6

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