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SFH618-5 PDF预览

SFH618-5

更新时间: 2024-01-30 00:51:22
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
4页 471K
描述
Phototransistor, 5.3 kV TRIOS Low Current Input Optocoupler

SFH618-5 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.84
Coll-Emtr Bkdn Voltage-Min:50 V配置:SINGLE
标称电流传输比:250%最大绝缘电压:5300 V
元件数量:1光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER

SFH618-5 数据手册

 浏览型号SFH618-5的Datasheet PDF文件第2页浏览型号SFH618-5的Datasheet PDF文件第3页浏览型号SFH618-5的Datasheet PDF文件第4页 
SFH618A/628A  
Phototransistor, 5.3 kV TRIOS  
Low Current Input  
Optocoupler  
FEATURES  
• Very High CTR at I =1.0 mA, V =0.5 V  
Dimensions in Inches (mm)  
F
CE  
2
– SFH618A-2, 63–125%  
1
SFH618A  
SFH628A  
pin one ID  
– SFH618A-3, 100–200%  
– SFH618A-4, 160–320%  
– SFH618A-5, 250–500%  
– SFH628A-2, 63–200%  
– SFH628A-3, 100–320%  
– SFH628A-4, 160–500%  
Anode  
Collector  
Emitter  
4
3
1
2
.255 (6.48)  
.268 (6.81)  
Cathode  
Anode/  
Collector  
Emitter  
4
3
1
2
Cathode  
3
4
• Specified Minimum CTR at I =0.5 mA  
Cathode/  
Anode  
F
.179 (4.55)  
.190 (4.83)  
– SFH618A, V =1.5 V: 32% (typical 120%)  
CE  
– SFH628A, V =1.5 V: 50% (typical 160%)  
CE  
.300 (7.62) typ.  
.031 (.79) typ.  
.050 (1.27) typ.  
.030 (.76)  
.045 (1.14)  
• Good CTR Linearity Depending on  
Forward Current  
• Low CTR Degradation  
• High Collector-emitter Voltage, V  
• Isolation Test Voltage, 5300 V  
• Low Coupling Capacitance  
• Field-Effect Stable by TRIOS (TRansparent IOn  
Shield)  
• End-Stackable, 0.100" (2.54 mm) Spacing  
• High Common-mode Interference Immunity  
(Unconnected Base)  
.130 (3.30)  
.150 (3.81)  
.230 (5.84)  
.250 (6.35)  
=55 V  
CEO  
RMS  
10°  
4°  
.110 (2.79)  
.130 (3.30)  
typ.  
.020 (.508 )  
.035 (.89)  
3°–9°  
.008 (.20)  
.012 (.30)  
.018 (.46)  
.022 (.56)  
.050 (1.27)  
0.100 (2.54)  
• Underwriters Lab File #52744  
Maximum Ratings  
Emitter  
Reverse Voltage (SFH618A)............................................................. 6.0 V  
DC Forward Current (SFH628A) .................................................. 50 mA  
Surge Forward Current (t 10 µs) (SFH628A) ............................... 2.5 A  
Total Power Dissipation ................................................................. 70 mW  
Detector  
Collector-emitter Voltage ................................................................... 55 V  
Emitter-collector Voltage................................................................... 7.0 V  
Collector Current ............................................................................ 50 mA  
VE  
D
VDE 0884 Available with Option 1  
• SMD Option — See SFH6186/6286 Data Sheet  
APPLICATIONS  
• Telecom  
• Industrial Controls  
• Battery Powered Equipment  
• Office Machines  
p
Collector Current (t 1.0 ms) ....................................................... 100 mA  
DESCRIPTION  
p
Total Power Dissipation ............................................................... 150 mW  
Package  
Isolation Test Voltage between Emitter and  
Detector, refer to Climate DIN 40046,  
The SFH618A/628A feature a high current transfer  
ratio, low coupling capacitance and high isolation  
voltage. These couplers have a GaAs infrared emit-  
ting diode emitter, which is optically coupled to a sili-  
con planar phototransistor detector, and is  
part 2, Nov. 74 ..................................................................... 5300 V  
RMS  
Creepage Distance .................................................................... 7.0 mm  
Clearance................................................................................... 7.0 mm  
Insulation Thickness between Emitter and Detector.................. 0.4 mm  
Comparative Tracking Index  
incorporated in a plastic DIP-4 package.  
The coupling devices are designed for signal trans-  
mission between two electrically separated circuits.  
per DIN IEC 112/VDE0 303, part 1 ..................................................175  
The couplers are end-stackable with 2.54 mm lead  
spacing.  
Isolation Resistance  
12  
V =500 V, T =25°C................................................................. 10  
IO  
A
Creepage and clearance distances of >8.0 mm are  
achieved with option 6. This version complies with  
IEC 950 (DIN VDE 0805) for reinforced insulation up  
11  
V =500 V, T =100°C............................................................... 10  
IO  
A
Storage Temperature Range ............................................. –55 to +150°C  
Ambient Temperature Range............................................. –55 to +100°C  
Junction Temperature......................................................................100°C  
Soldering Temperature (max. 10 s. Dip Soldering  
to an operation voltage of 400 V  
or DC.  
RMS  
Distance to Seating Plane 1.5 mm) ..........................................260°C  
Document Number: 83673  
Revision 17-August-01  
www.vishay.com  
2–242  

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