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SFH6186-3TTRIOS PDF预览

SFH6186-3TTRIOS

更新时间: 2024-02-07 12:40:11
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
8页 236K
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SFH6186-3TTRIOS 数据手册

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SFH618A / SFH6186  
VISHAY  
Vishay Semiconductors  
Optocoupler, Phototransistor Output, Low Input Current  
Features  
• Good CTR Linearity Depending on  
Forward Current  
• Low CTR Degradation  
• High Collector-emitter Voltage, V CEO = 55 V  
1
• Isolation Test Voltage, 5300 V RMS  
• Low Coupling Capacitance  
A
C
C
E
4
3
1
2
1
• End-Stackable, 0.100 " (2.54 mm) Spacing  
• High Common-mode Interference Immunity  
• Lead-free component  
i179061  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
The couplers are end-stackable with 2.54 mm lead  
spacing.  
Creepage and clearance distances of > 8.0 mm  
achieved with option 6. This version complies with  
IEC 60950 (DIN VDE 0805) for reinforced insulation  
to an operation voltage of 400 VRMS or DC.  
Agency Approvals  
• UL1577, File No. E52744 System Code H or J,  
Double Protection  
• CSA 93751  
Order Information  
• DIN EN 60747-5-2 (VDE0884)  
DIN EN 60747-5-5 pending  
Available with Option 1  
Part  
Remarks  
SFH618A-2  
CTR 63 - 125 %, DIP-4  
SFH618A-3  
CTR 100 - 200 %, DIP-4  
Applications  
Telecom  
SFH618A-4  
CTR 160 - 320 %, DIP-4  
SFH618A-5  
CTR 250 - 500 %, DIP-4  
Industrial Controls  
Battery Powered Equipment  
Office Machines  
SFH6186-2  
CTR 63 - 125 %, SMD-4  
SFH6186-3  
CTR 100 - 200 %, SMD-4  
SFH6186-4  
CTR 160 - 320 %, SMD-4  
SFH6186-5  
CTR 250 - 500 %, SMD-4  
Description  
SFH618A-3X006  
SFH618A-3X007  
SFH618A-4X006  
SFH618A-5X006  
SFH618A-5X007  
CTR 100 - 200 %, DIP-4 400 mil (option 6)  
CTR 100 - 200 %, SMD-4 (option 7)  
CTR 160 - 320 %, DIP-4 400 mil (option 6)  
CTR 250 - 500 %, DIP-4 400 mil (option 6)  
CTR 250 - 500 %, SMD-4 (option 7)  
The SFH618A (DIP) and SFH6186 (SMD) feature a  
high current transfer ratio, low coupling capacitance  
and high isolation voltage. These couplers have a  
GaAs infrared diode emitter, which is optically cou-  
pled to silicon planar phototransistor detector, and is  
incorporated in a plastic DIP-4 or SMD package.  
For additional information on the available options refer to  
Option Information.  
The coupling devices are designed for signal trans-  
mission between two electrically separated circuits.  
Document Number 83673  
Rev. 1.5, 20-Apr-04  
www.vishay.com  
1

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