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SFH154 PDF预览

SFH154

更新时间: 2024-11-05 22:22:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 231K
描述
Advanced Power MOSFET

SFH154 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):867 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):34 A
最大漏极电流 (ID):34 A最大漏源导通电阻:0.075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):204 W最大脉冲漏极电流 (IDM):136 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SFH154 数据手册

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SFH154  
Advanced Power MOSFET  
FEATURES  
BVDSS = 150 V  
RDS(on) = 0.075   
ID = 34 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
150oC Operating Temperature  
Lower Leakage Current : 10 µA (Max.) @ VDS = 150V  
Lower RDS(ON) : 0.064 (Typ.)  
TO-3P  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
150  
34  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
ID  
A
21.6  
136  
±30  
867  
34  
IDM  
VGS  
EAS  
IAR  
A
V
Gate-to-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
20.4  
5.0  
mJ  
V/ns  
W
204  
1.63  
PD  
TJ , TSTG  
TL  
W/oC  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
oC  
Purposes, 1/8from case for 5-seconds  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
0.61  
--  
Units  
--  
0.24  
--  
oC/W  
RθCS  
RθJA  
Junction-to-Ambient  
40  
1

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