Datasheet > SFF20N60MUBTXV

SFF20N60MUBTXV

更新时间： 2025-07-17 20:41:59

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	158K
描述
Transistor

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技术参数
数据手册

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SFF20N60MUBTXV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

SFF20N60MUBTXV 数据手册

SFF20N60M

SFF20N60Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

20 AMP / 600 Volts

Typ 0.30 Ω

N-Channel POWER MOSFET

│

SFF20N60

│

└ Screening ^2/__ = Not Screen

TX = TX Level

TXV = TXV Level

S = S Level

│

Features:

│

└ Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

 Rugged Construction with Polysilicon Gate

 Low R_DS(ON)and High Transconductance

 Excellent High Temperature Stability

 Very Fast Switching Speed

 Fast Recovery and Superior dV/dt performance

└ Package ^3/M = TO-254

Z = TO-254Z

 Increased Reverse Energy Capability

TO-254 (M)

TO-254Z (Z)

 Low Input and Transfer Capacitance for Easy Paralleling

 Hermetically Sealed, Isolated Surface Mount Power Package

 Ceramic Seals for Improved Hermeticity

 TX, TXV, S-Level screening available



Replacement for IXTH20N60 Types

Maximum Ratings

Symbol

V_DS

Value

Units

Volts

Amps

Drain – Source Voltage

Gate – Source Voltage

Continues Drain Current

600

±30

V_GS

I_D

E_AR

E_AS

0.03

1.0

Avalanche Energy, repetitive

Avalanche energy, single pulse

150

114

T_C= 25ºC

T_C= 55ºC

Power Dissipation

P_D

Top & Tstg

R_θJC

ºC

Operating & Storage Temperature

-55 to +175

Maximum Thermal Resistance

Junction to Case

0.83

ºC/W

Case Outline: TO-254 (M)

Case Outline: TO-254Z (Z)

Optional Lead Bend Configuration

MDB & ZDB

MUB & ZUB

Suffixes

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00201D

DOC

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