SFF20P10J

更新时间： 2024-11-20 03:32:35

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	67K
描述
20 AMP /100 Volts 200 mヘ P-Channel MOSFET

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中文翻译

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技术参数
数据手册

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SFF20P10J 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

SFF20P10J 数据手册

SFF20P10J

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

20 AMP /100 Volts

200 mW

P-Channel MOSFET

TO-257

Features:

Rugged construction with polysilicon gate

Low ON-resistance and high

transconductance

Excellent high temperature stability

Hermetically Sealed, Isolated Package

Low Total Gate Charge

Fast Switching

replacement for IRF9140 types

TX, TXV, S-Level screening available

Maximum Ratings

Drain - Source Voltage

Gate – Source Voltage

Symbol

V_DSS

Value

-100

Units

±20

V_GS

@ T_C= 25ºC

@ T_C= 100ºC

I_D1

I_D2

Max. Continuous Drain Current (package limited)

12.5

Max. Avalanche current

@ L= 0.1 mH

@ T_C= 25ºC

I_AR

E_AR

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Total Power Dissipation

500

E_AS

100

P_D

-55 to +150

Operating & Storage Temperature

ºC

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.25

ºC/W

R_0JC

PACKAGE OUTLINE:

TO-257 (J)

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE

SUFFIX JDB

SUFFIX JUB

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0012A

DOC

中文翻译

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