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SFF110S.22C

更新时间： 2024-09-26 17:16:43

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	34K
描述
3.5 A, 100 V, 0.55 Ω N-Channel MOSFET Transistor

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SFF110S.22C 数据手册

SFF110S.22

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

3.5 A /100 Volts / 0.6 W

DESIGNER’S DATA SHEET

N-Channel MOSFET Transistor

Features:

· Rugged Construction with Polysilcon Gate

· Small Footprint Hermetic Surface Mount Device with

Excellent Thermal Properties

· Replacement/Enhancement for 2N6782

· TX, TXV, S-Level Screening Available

· Very Fast Switching Characteristics

SMD.22

Maximum Ratings

Symbol

Value

Units

100

Drain – Source Voltage

Drain – Gate Voltage

Gate – Source Voltage

V_DS

V_DG

V_GS

Volts

+/-20

3.5

2.25

@ T_C= 25ºC

@ T_C= 100ºC

I_D1

I_D2

Continuous Drain Current

Amps

Note 1

Note 2

16.5

0.8

Power Dissipation @ T_C= 25ºC

Power Dissipation @ T_A= 25ºC

P_D

ºC

-55 to +150

Operating & Storage Temperature

Top & Tstg

Maximum Thermal Resistance

Junction to Case and to Ambient

R_qJC

R_qJA

7.5 (typ 5)

156.5

ºC/W

Note1: Derated 60.6 mW/°C above T_C= 25°C

Note2: Derated 6.4 mW/°C above T_A= 25°C

PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE

.220±.007

.065±.010

.150

±.007

.134 .030

.052

.140

.070

.090

.005 TYP

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DOC

DATA SHEET #: FT0015A

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