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SF52B-G PDF预览

SF52B-G

更新时间: 2024-11-17 12:46:59
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上华 - COMCHIP /
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4页 90K
描述
Super Fast Rectifiers

SF52B-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:DO-27JESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:100 V
最大反向电流:5 µA最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SF52B-G 数据手册

 浏览型号SF52B-G的Datasheet PDF文件第2页浏览型号SF52B-G的Datasheet PDF文件第3页浏览型号SF52B-G的Datasheet PDF文件第4页 
Super Fast Rectifiers  
SF51-G Thru. SF58-G  
Reverse Voltage: 50 to 600 Volts  
Forward Current: 5.0 Amp  
RoHS Device  
DO-27  
Features  
-Supper fast switching time for high efficiency.  
-Low forward voltage drop.  
0.052(1.30)  
0.048(1.20)  
DIA.  
-High current capability.  
1.0(25.4) min.  
-Low reverse leakage current.  
-Plastic material has UL flammability classification 94V-0  
Mechanical data  
0.375(9.50)  
0.335(8.50)  
-Case: Molded plastic, JEDEC DO-27 molded plastic.  
-Terminals: Solderable per MIL-STD-750, method 2026.  
-Polarity: Color band denotes cathode.  
-Mounting position: Any.  
0.220(5.60)  
0.197(5.00)  
DIA.  
1.0(25.4) min.  
-Weight: 1.1 grams approx.  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
Symbol  
VRRM  
SF51-G SF52-G SF53-G SF54-G SF55-G SF56-G SF58-G  
Parameter  
Unit  
V
Max. repetitive peak reverse voltage  
50  
50  
35  
100  
100  
70  
150  
150  
105  
200  
200  
140  
300  
300  
210  
400  
400  
280  
600  
600  
420  
Max. DC blocking voltage  
Max. RMS voltage  
VDC  
V
VRMS  
V
Max. averaged forward rectified current  
@TA=55°C  
IO  
5.0  
A
A
Forward surge current, 8.3ms single  
half sine-wave superimposed on rated  
load (JEDEC method)  
IFSM  
150  
Peak forward voltage at IF=4.0A DC  
Max. Reverse recovery time (Note 1)  
Typical Junction capacitance (Note 2)  
VF  
Trr  
CJ  
0.95  
35  
1.25  
40  
1.30  
50  
V
nS  
pF  
90  
75  
@TJ=25°C  
Max. DC reverse current  
IR  
IR  
5.0  
μA  
at rated DC bolcking voltage @TJ=100°C  
Typical. thermal resistance (Note 3)  
Operating junction temperature  
100  
RθJA  
TJ  
10  
°C/W  
°C  
-55 to +125  
-55 to +150  
Storage temperature range  
TSTG  
°C  
Note 1. Measured with IF=0.5A, IR=1A, IRR=0.25A  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance junction to ambient.  
REV: A  
Page 1  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BS007  
Comchip Technology CO., LTD.  

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