Datasheet > SF100BA50

SF100BA50

更新时间： 2024-09-24 22:22:03

品牌	Logo	应用领域
SANREX		/
页数	文件大小	规格书
3页	483K
描述
MOSFET MODULE

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中文翻译

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技术参数
数据手册

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SF100BA50 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
最大漏极电流 (Abs) (ID)：	100 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
元件数量：	1	最高工作温度：	150 °C
最大功率耗散 (Abs)：	600 W	子类别：	FET General Purpose Power
Base Number Matches：	1

SF100BA50 数据手册

MOSFET MODULE

SF100BA50

UL;E76102 M

SF100BA50 is a isolated power MOSFET module designed for fast swiching

applications of high voltage and current. The mounting base of the module is electrically

isolated from semiconductor elements for simple heatsink construction.

DSS

100A, V

500V

Suitable for high speed switching applications.

Low ON resistance.

Wide Safe Operating Areas.

700ns

Applications

UPS CVCF , Motor Control, Switching Power Supply, etc.

Unit

Maximum Ratings

Tj 25

Unit

Ratings

SF100BA50

500

Symbol

Item

Conditions

DSS

Drain-Source Voltage

Gate-Source Voltage

GSS

Duty 43%

Tc 25

100

Drain

Current

Pulse

200

Reverse Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Isolation Voltage R.M.S.

100

600

150

125

Tstg

ISO

A.C. 1minute

2500

Mounting M6

Terminal M5

Recommended Value 2.5 3.9 25 40

Recommended Value 1.5 2.5 15 25

Typical Value

4.7 48

2.7 28

160

Mounting

Torque

N m

kgf B

Mass

Electrical Characteristics

Tj 25

Ratings

Typ.

Symbol

Item

Conditions

Unit

Min.

Max.

2.0

GSS

Gate Leakage Current

20V

500V

1mA

DSS

Zero Gate Voltage Drain Current

Darin-Source Breakdown Voltage

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Drain-Source On-State Voltage

Forward Transconductance

Input Capacitance

1.0

BR DSS

500

1.0

GS th

10mA

15V

5.0

DS on

50A

DS on

I^D50A V^GS15V

V^DS10A V^D50A

V^GS0V V^DS25V

3.5

gfs

Ciss

Coss

Crss

td on

1.0MHz

20000

3800

1500

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

120

Rise Time

Switching

Time

R^L

R^GS50

V^GS15V

I^D50A R^G

td off

Turn-off Delay Time

Fall Time

1100

280

SDS

Diode Forward Voltage

Reverse Recovery Time

Thermal Resistance

I^D50A V^GS0V

1.5

trr

700

50A

0V di/dt 100A/ s

0.21

Rth j-c

12 3

中文翻译

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