MOSFET MODULE
SF100CB100
UL;E76102(M)
SF100CB100 is a isolated power MOSFET module designed for fast swiching applications
of high voltage and current with a fast recovery diode(trr
The mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
)reverse connected.
≦300ns
108max
93±0.5
�
4ーφ6.5
D
●
D
DSS
I =100A, V =1000V
S
● Suitable for high speed switching applications.
● Low ON resistance.
G
S
● Wide Safe Operating Areas.
●
rr
t ≦300ns fast recovery diode for free wheel
21.0
29.0
24.0
(Applications)
2ーM6
2ーM4
S
D
Unit:
A
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Unit
Symbol
Item
Conditions
SF100CB100
DSS
V
Drain-Source Voltage
Gate-Source Voltage
1000
±30
V
V
GSS
V
D
I
DC
100
Drain
A
Current
DP
I
Pulse
200
D
-I
Source Current
100
A
W
℃
℃
V
T
P
Total Power Dissipation
Channel Temperature
Storage Temperature
800
Tc=25℃
Tj
-40 to +150
-40 to +125
2500
Tstg
ISO
V
A.C. 1minute
Isolation Voltage(R.M.S.)
Mounting(M6) Recommended Value 2.5
-
-
-
3.9(25
3.9(25
1.4(10
-
-
-
40)
40)
14)
4.7(48)
4.7(48)
1.5(15)
460
Mounting
Torque
N・m
(kgf・B)
Terminal(M6) Recommended Value 2.5
Terminal(M4) Recommended Value 1.0
Typical Value
Mass
g
■Electrical Characteristics
(Tj=25℃ unless otherwise specified)
Ratings
Unit
Symbol
Item
Conditions
Min.
Typ.
Max.
±0.1
4.0
GSS
I
Gate Leakage Current
GS
DS
A
μ
V
=±20V,V =0V
DSS
I
Zero Gate Voltage Drain Current
Darin-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
GS
V
DS
mA
V
=0V,V =800V
(BR)DSS
V
GS
V
D
1000
1.5
=0V,I =1mA
GS(th)
V
DS
GS
D
3.5
150
15
V
V =V ,I =10mA
DS(on)
R
D
GS
I =100A,V =15V
mΩ
V
DS(on)
V
D
GS
I =100A,V =15V
gfs
Ciss
DS
D
30
50
S
V =10A,V =75A
GS
V
DS
16000 19200
pF
pF
pF
=0V,V =25V,f=1.0MHz
Coss
Crss
td(on)
tr
Output Capacitance
GS
V
DS
2900
1800
4200
2600
150
300
600
300
1.8
=0V,V =25V,f=1.0MHz
Revers e Trans fer Capacitance
Turn-on Delay Time
GS
V
DS
=0V,V =25V,f=1.0MHz
Rise Time
Switching
Time
L
GS
R =6Ω,V =15V/-5V
I =100A,R =2.2Ω
ns
D
G
Turn-off Delay Time
Fall Time
td(off)
tf
SDS
V
Diode Forward Voltage
Reverse Recovery Time
D
GS
V
-I =100A,V =0V
trr
D
GS
300
0.16
0.64
ns
-I =100A,V =15V,di/dt=400A/μs
MOSFET
Diode
Thermal Resistance
Rth(j-c)
℃/W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com