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SF100CB100 PDF预览

SF100CB100

更新时间: 2024-09-24 21:55:23
品牌 Logo 应用领域
SANREX 二极管开关快速恢复二极管
页数 文件大小 规格书
3页 113K
描述
Isolated power MOSFET module designed for fast switching applications of high voltage and current with a fast recovery diode

SF100CB100 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.75
最大漏极电流 (Abs) (ID):100 AFET 技术:METAL-OXIDE SEMICONDUCTOR
元件数量:1最高工作温度:150 °C
最大功率耗散 (Abs):800 W子类别:FET General Purpose Power
Base Number Matches:1

SF100CB100 数据手册

 浏览型号SF100CB100的Datasheet PDF文件第2页浏览型号SF100CB100的Datasheet PDF文件第3页 
MOSFET MODULE  
SF100CB100  
UL;E76102M)  
SF100CB100 is a isolated power MOSFET module designed for fast swiching applications  
of high voltage and current with a fast recovery diodetrr  
The mounting base of the module is electrically isolated from semiconductor elements for  
simple heatsink construction.  
reverse connected.  
≦300ns  
108max  
93±0.5  
4φ6.5  
D
D
DSS  
I 100A, V 1000V  
S
Suitable for high speed switching applications.  
Low ON resistance.  
G
S
Wide Safe Operating Areas.  
rr  
t 300ns fast recovery diode for free wheel  
21.0  
29.0  
24.0  
Applications)  
2ーM6  
2ーM4  
S
D
Unit:  
A
Maximum Ratings  
Tj25℃ unless otherwise specified)  
Ratings  
Unit  
Symbol  
Item  
Conditions  
SF100CB100  
DSS  
V
Drain-Source Voltage  
Gate-Source Voltage  
1000  
±30  
V
V
GSS  
V
D
I
DC  
100  
Drain  
A
Current  
DP  
I
Pulse  
200  
D
-I  
Source Current  
100  
A
W
V
T
P
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
800  
Tc25℃  
Tj  
40 to +150  
40 to +125  
2500  
Tstg  
ISO  
V
A.C. 1minute  
Isolation VoltageR.M.S.)  
MountingM6Recommended Value 2.5  
-
-
-
3.925  
3.925  
1.410  
-
-
-
40)  
40)  
14)  
4.748)  
4.748)  
1.515)  
460  
Mounting  
Torque  
Nm  
kgfB)  
TerminalM6Recommended Value 2.5  
TerminalM4Recommended Value 1.0  
Typical Value  
Mass  
g
Electrical Characteristics  
Tj25℃ unless otherwise specified)  
Ratings  
Unit  
Symbol  
Item  
Conditions  
Min.  
Typ.  
Max.  
±0.1  
4.0  
GSS  
I
Gate Leakage Current  
GS  
DS  
A
μ
V
=±20VV 0V  
DSS  
I
Zero Gate Voltage Drain Current  
Darin-Source Breakdown Voltage  
Gate-Source Threshold Voltage  
Drain-Source On-State Resistance  
Drain-Source On-State Voltage  
Forward Transconductance  
Input Capacitance  
GS  
V
DS  
mA  
V
0VV 800V  
BRDSS  
V
GS  
V
D
1000  
1.5  
0VI 1mA  
GSth)  
V
DS  
GS  
D
3.5  
150  
15  
V
V V I 10mA  
DSon)  
R
D
GS  
I 100AV 15V  
mΩ  
V
DSon)  
V
D
GS  
I 100AV 15V  
gfs  
Ciss  
DS  
D
30  
50  
S
V 10AV 75A  
GS  
V
DS  
16000 19200  
pF  
pF  
pF  
0VV 25Vf1.0MHz  
Coss  
Crss  
tdon)  
tr  
Output Capacitance  
GS  
V
DS  
2900  
1800  
4200  
2600  
150  
300  
600  
300  
1.8  
0VV 25Vf1.0MHz  
Revers e Trans fer Capacitance  
Turn-on Delay Time  
GS  
V
DS  
0VV 25Vf1.0MHz  
Rise Time  
Switching  
Time  
L
GS  
R 6Ω,V 15V/5V  
I 100AR 2.2Ω  
ns  
D
G
Turn-off Delay Time  
Fall Time  
tdoff)  
tf  
SDS  
V
Diode Forward Voltage  
Reverse Recovery Time  
D
GS  
V
I 100AV 0V  
trr  
D
GS  
300  
0.16  
0.64  
ns  
I 100AV 15Vdi/dt400A/μs  
MOSFET  
Diode  
Thermal Resistance  
Rthj-c)  
/W  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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