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SED110KB30 PDF预览

SED110KB30

更新时间: 2024-11-21 20:38:23
品牌 Logo 应用领域
SSDI 二极管
页数 文件大小 规格书
2页 43K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 110A, 30V V(RRM), Silicon,

SED110KB30 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:S-CXSO-N2最大非重复峰值正向电流:1000 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:110 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:UNSPECIFIEDBase Number Matches:1

SED110KB30 数据手册

 浏览型号SED110KB30的Datasheet PDF文件第2页 
PRELIMINARY  
SED110LB30  
SED110LE30  
SOLID STATE DEVICES, INC.  
14005 Stage Road * Santa Fe Springs, Ca 90670  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
110 AMP  
30 VOLTS  
Designer's Data Sheet  
SCHOTTKY  
RECTIFIER  
FEATURES:  
• Low Reverse Leakage  
• Low Forward Voltage Drop  
SEDPACK 3  
• Hermetically Sealed Power Surface Mount Package  
• Guard Ring for Overvoltage Protection  
• Eutectic Die Attach  
• 175oC Operating Temperature  
• TX, TXV and Space Level Screening Available  
SYMBOL  
VALUE  
30  
UNITS  
Volts  
Maximum Ratings  
V
V
RRM  
RWM  
V
Peak Repetitive Reverse and DC Blocking Voltage  
R
Average Rectified Forward Current  
Io  
110  
Amps  
Amps  
(Resistive Load, 60Hz, Sine Wave, T = 100 oC  
C
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow  
I
1000  
-55 TO +175  
0.3  
FSM  
junction to reach equilibrium between pulses, T = 25oC)  
A
Operating and Storage Temperature  
Top & Tstg  
oC  
Maximum Thermal Resistance  
Junction to Case  
R
2JC  
oC/W  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: SH0015A  

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