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SDR954MDBTXV PDF预览

SDR954MDBTXV

更新时间: 2024-11-11 19:41:35
品牌 Logo 应用领域
SSDI 超快速恢复二极管局域网
页数 文件大小 规格书
2页 131K
描述
Rectifier Diode, 1 Phase, 2 Element, 50A, 400V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN

SDR954MDBTXV 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
应用:HYPER FAST RECOVERY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-254AAJESD-30 代码:S-XSFM-P3
最大非重复峰值正向电流:450 A元件数量:2
相数:1端子数量:3
最大输出电流:50 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SDR954MDBTXV 数据手册

 浏览型号SDR954MDBTXV的Datasheet PDF文件第2页 
SDR953M & Z  
Thru  
SDR956M & Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
SDR95  
50A, 35nsec, 300-600 V  
Hyper Fast Rectifier  
__ __ __ __  
Screening 2/ __ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Hyper Fast Recovery: 35nsec Maximum 3/  
High Surge Rating  
Lead Bend Option  
(See Figure 1)  
Low Reverse Leakage Current  
Low Junction Capacitance  
Package M = TO-254, Z = TO-254Z  
Hermetically Sealed Low Profile Package  
Gold Eutectic Die Attach Available  
Ultrasonic Aluminum Wire Bonds  
Higher Voltages and Faster Recovery Times  
Available, Contact Factory  
Voltage 3 = 300V, 4 = 400V,  
5 = 500V, 6 = 600V.  
Ceramic Seal for Improved Hermeticity Available  
TX, TXV, and S-Level Screening Available 2/  
Maximum Ratings  
Symbol  
Value  
Units  
300  
400  
500  
600  
SDR953M & Z  
SDR954M & Z  
SDR955M & Z  
SDR956M & Z  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
And DC Blocking Voltage  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)  
50  
Io  
Amps  
5/  
Peak Surge Current  
450  
IFSM  
Amps  
ºC  
4/  
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)  
-65 to +200  
Operating & Storage Temperature  
TOP & TSTG  
Maximum Total Thermal Resistance  
Junction to Case  
1.2  
ºC/W  
RθJC  
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.  
3/ Recovery Conditions: IF =.5 Amp, IR = 1A, IRR = .25A.  
4/ Pins 2 and 3 Tied Together.  
5/ Available with higher surge ratings.  
TO-254 (M)  
TO-254Z (Z)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0029G  
DOC  

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