SDR950M

更新时间： 2024-11-15 04:32:23

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	79K
描述
50A, 35nsec typ., 100-200 V Hyper Fast Rectifier

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数据手册

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SDR950M 数据手册

SDR950M & Z

Thru

SDR952M & Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information ^1/

__ __ __

50A, 35nsec typ., 100-200 V

Hyper Fast Rectifier

SDR950

Screening ^2/__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Features:

Hyper Fast Recovery: 50nsec Maximum ^3/

High Surge Rating

Leg Bend Option

(See Figure 1)

Low Reverse Leakage Current

Low Junction Capacitance

Hermetically Sealed Package

Gold Eutectic Die Attach

Ultrasonic Aluminum Wire Bonds

Higher Voltages and Faster Recovery Times

Available, Contact Factory

Package M = TO-254, Z = TO-254Z

Ceramic Seal for Improved Hermeticity Available

TX, TXV, and S-Level Screening Available ^2/

Maximum Ratings

Symbol

Value

Units

100

150

200

SDR950M & Z

SDR951M & Z

SDR952M & Z

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Volts

Average Rectified Forward Current

Amps

(Resistive Load, 60 Hz Sine Wave, T_A= 25 °C) ^5/

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, or equivalent DC)

350

I_FSM

Amps

ºC

-65 to +200

Operating & Storage Temperature

T_OP& T_STG

Maximum Total Thermal Resistance

Junction to Case ^4/

R_qJC

0.85

ºC/W

Notes:

1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Recovery Conditions: I =10 Amp, di/dt = 200A/µs

4/ Pins 2 and 3 Tied Together.

5/ T_C= 150°C, Derate to 0A @ 200°C.

TO -254 (M)

TO -254Z (Z)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RH0039K

DOC

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