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SDR950S1 PDF预览

SDR950S1

更新时间: 2024-11-15 04:32:23
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 35K
描述
60 AMP 100-200 Volts 35nsec Hyper Fast Rectifier

SDR950S1 技术参数

生命周期:Active包装说明:R-XBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.62应用:HYPER FAST RECOVERY
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XBCC-N3最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:3最大输出电流:60 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.045 µs
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOMBase Number Matches:1

SDR950S1 数据手册

 浏览型号SDR950S1的Datasheet PDF文件第2页 
SDR950S1  
THRU  
SDR952S1  
Solid State Devices, Inc.  
14701Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
60 AMP  
100-200 Volts  
35nsec  
Features:  
· Hyper Fast Recovery: 35nsec typical  
Hyper Fast  
Rectifier  
· High Surge Rating  
· Low Reverse Leakage Current  
· Low Junction Capacitance  
· Hermetically Sealed Surface Mount Power Package  
· Gold Eutectic Die Attach Available  
· Ultrasonic Aluminum Wire Bonds  
· TX, TXV, and Space Level Screening Available.  
SMD1  
Maximum Ratings  
Symbol  
Value  
Units  
Peak Repetitive Reverse and  
DC Blocking Voltage 1/  
VRRM  
VRWM  
VR  
100  
150  
200  
SDR950S1  
SDR951S1  
SDR952S1  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)  
60  
Io  
Amps  
Amps  
Peak Surge Current  
600  
IFSM  
(8.3 ms Pulse, Half Sine Wave, TA = 25ºC) 1/  
-65 to +200  
0.8  
Operating & Storage Temperature  
Top & Tstg  
RqJL  
ºC  
Maximum Thermal Resistance  
Junction to Case,  
ºC/W  
1/ Connect pins 2&3 together  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0037C  
DOC  

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