5秒后页面跳转
SDR623CTJDB PDF预览

SDR623CTJDB

更新时间: 2024-09-27 20:57:51
品牌 Logo 应用领域
SSDI 超快速恢复二极管局域网
页数 文件大小 规格书
2页 48K
描述
Rectifier Diode, 1 Phase, 2 Element, 40A, 300V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

SDR623CTJDB 技术参数

生命周期:Active零件包装代码:TO-257AA
包装说明:R-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.32
应用:HYPER FAST RECOVERY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:TO-257AAJESD-30 代码:R-MSFM-P3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:40 A
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SDR623CTJDB 数据手册

 浏览型号SDR623CTJDB的Datasheet PDF文件第2页 
SDR623CTJ & CAJ  
thru  
SDR625CTJ & CAJ  
SOLID STATE DEVICES, INC.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
40AMPS  
300 - 500 VOLTS  
35 nsec  
Designer's Data Sheet  
FEATURES:  
• Hyper Fast Recovery: 35nsec Maximum  
• High Surge Rating  
HYPER FAST  
CENTERTAP RECTIFIER  
• Low Reverse Leakage Current  
• Low Junction Capacitance  
TO-257(J)  
• Hyper Fast Recovery: 35nsec Maximum  
• Isolated Hermetically Sealed Package  
• Custom Lead Forming Available  
• Eutectic Die Attach Available  
• Ultrasonic Aluminum Wire Bonds  
• TX, TXV and Space Level Screening Available  
Available in Following Configurations:  
Rectifier:  
SDR62_J, SDR62_JDB, and SDR62_JUB  
Common Cathode Centertap: SDR62_CTJ, SDR62_CTJDB, and SDR62_CTJUB  
Common Anode Centertap:  
SDR62_CAJ, SDR62_CAJDB, and SDR62_CAJUB  
SYMBOL  
VALUE  
UNITS  
Volts  
Maximum Ratings  
Peak Repetitive Reverse and  
DC Blocking Voltage  
SDR623CTJ & CAJ  
SDR624CTJ & CAJ  
SDR625CAJ & CAJ  
V
300  
400  
500  
RRM  
V
RWM  
V
R
Average Rectified Forward Current.  
Io  
40  
Amps  
2/  
(Resistive load, 60Hz, Sine Wave, T =25oC)  
A
Peak Surge Current  
I
250  
Amps  
oC  
FSM  
1/  
(8.3 ms Pulse, Half Sine Wave, T = 25oC)  
A
Operating and Storage Temperature  
Maximum Thermal Resistance  
TOP & Tstg  
-65 TO +175  
1/  
Junction to Case,  
Junction to Case,  
2.1  
1.0  
R
oC/W  
2JC  
2/  
NOTE:  
1/  
2/  
Per Leg.  
Both Legs Tied Together  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0051B  

与SDR623CTJDB相关器件

型号 品牌 获取价格 描述 数据表
SDR623CTJTX SSDI

获取价格

暂无描述
SDR623CTJUBTXV SSDI

获取价格

Rectifier Diode, 1 Phase, 2 Element, 20A, 300V V(RRM), Silicon, TO-257,
SDR623CTM SSDI

获取价格

40A 35nsec 300-600 V Hyper Fast Centertap Rectifier
SDR623CTMDBTX SSDI

获取价格

暂无描述
SDR623CTMU SSDI

获取价格

Rectifier Diode, 1 Phase, 2 Element, 40A, 300V V(RRM), Silicon, TO-254AA, HERMETIC SEALED,
SDR623CTMUBS SSDI

获取价格

Rectifier Diode,
SDR623CTMUBTX SSDI

获取价格

Rectifier Diode,
SDR623CTMUTX SSDI

获取价格

Rectifier Diode, 40A, 300V V(RRM),
SDR623CTS1 SSDI

获取价格

40A 35nsec 300-600 V Hyper Fast Centertap Rectifier
SDR623CTSMP6 SSDI

获取价格

Rectifier Diode,