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SDR622RJTX PDF预览

SDR622RJTX

更新时间: 2024-02-04 14:11:13
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 114K
描述
Rectifier Diode, 1 Phase, 1 Element, 20A, 200V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

SDR622RJTX 技术参数

生命周期:Active零件包装代码:TO-254Z
包装说明:S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
应用:HYPER FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-XSFM-P3
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:3
最大输出电流:20 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SDR622RJTX 数据手册

 浏览型号SDR622RJTX的Datasheet PDF文件第2页 
SDR620CTM&Z  
thru  
SDR622CTM&Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
40 AMP, 100 - 200 VOLTS  
35 nsec HYPER FAST  
CENTERTAP RECTIFIER  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
__ __ __ __ __  
SDR62  
│ └ Screening 2/  
__  
= Not Screened  
FEATURES:  
TX = TX Level  
TXV = TXV Level  
S
Replaces 1N6657, 1N6658, 1N6659  
Devices  
Hyper Fast Recovery: 35 ns Maximum  
High Surge Rating  
Low Reverse Leakage Current  
Low Junction Capacitance  
Hermetically Sealed Package  
Gold Eutectic Die Attach Available  
Ultrasonic Aluminum Wire Bonds  
TX, TXV, or Space Level Screening  
Available  
= S Level  
Lead Options  
__= Straight Leads  
DB = Down Bent  
UB = Up Bent  
Package  
M = TO-254  
Z = TO-254Z  
Configuration  
CT = Common Cathode  
CA = Common Anode  
D = Doubler  
DR = Doubler Reverse  
Family/Voltage  
0 = 100V  
1 = 150V  
2 = 200V  
Maximum Ratings  
Symbol  
Value  
Units  
Volts  
SDR620  
SDR621  
SDR622  
VRRM  
VRWM  
VR  
100  
150  
200  
Peak Repetitive Reverse and  
DC Blocking Voltage 3/  
Average Rectified Forward Current 4/  
(Resistive Load, 60 Hz Sine Wave, TC= 100ºC)  
Amps  
IO  
40  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA= 25ºC, per leg)  
Amps  
ºC  
IFSM  
200  
Operating & Storage Temperature  
T
OP & TSTG  
-65 to +200  
Maximum Total Thermal Resistance  
Junction to Case, each individual diode  
Junction to Case 4/  
2.0  
1.2  
ºC/W  
RθJC  
TO-254Z  
TO-254  
NOTES:  
1/ For ordering Information, Price, and Availability, Contact Factory.  
2/ Screening per MIL-PRF-19500.  
3/ Higher voltages available.  
4/ Both Legs Tied Together.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0027F  
DOC  

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