Datasheet > SDR60U120CAPTX

SDR60U120CAPTX

更新时间： 2024-11-06 19:35:19

品牌	Logo	应用领域
SSDI		超快恢复二极管快速恢复二极管局域网
页数	文件大小	规格书
2页	91K
描述
Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED PACKAGE-3

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SDR60U120CAPTX 技术参数

生命周期：	Active	零件包装代码：	TO-259
包装说明：	HERMETIC SEALED PACKAGE-3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.25
应用：	ULTRA FAST RECOVERY	配置：	COMMON ANODE, 2 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	TO-259	JESD-30 代码：	R-XSFM-P3
最大非重复峰值正向电流：	400 A	元件数量：	2
相数：	1	端子数量：	3
最大输出电流：	60 A	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	最大重复峰值反向电压：	1200 V
最大反向恢复时间：	0.055 µs	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	SINGLE
Base Number Matches：	1

SDR60U120CAPTX 数据手册

SDR60U080CT

thru

SDR60U120CT

Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

60 AMP

ULTRA FAST LOW VF

CENTERTAP RECTIFIER

800 -1200 Volts

SDR60

___ ___ ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

│

└

│

└

55 nsec

Package Type

N = TO-258

P = TO-259

Features:

 Ultra Fast Recovery: 40 nsec typical

 High Surge Rating

 Low Reverse Leakage Current

 Low Forward Voltage Drop

Configuration

CT = Common Cathode

CA = Common Anode

D = Doubler

 Low Junction Capacitance

DR = Doubler Reverse

 Hermetically Sealed Package

 Gold Eutectic Die Attach available

 Ultrasonic Aluminum Wire Bonds

 Ceramic Seals for improved hermeticity available

 Available in Centertap and Doubler versions

 TX, TXV, Space Level Screening Available Consult

Factory.

Voltage/Family

080 = 800V

090 = 900V

100 = 1000V

110 = 1100V

120 = 1200V

Recovery Time

U = Ultra Fast

Maximum Ratings

Symbol

V_RRM

V_RWM

V_R

Value

Units

Volts

Peak Repetitive Reverse and

DC Blocking Voltage

SDR60U080

SDR60U090

SDR60U100

SDR60U110

SDR60U120

800

900

1000

1100

1200

Average Rectified Forward Current

Amps

(Resistive Load, 60 Hz Sine Wave, T_A= 25ºC)^3/4/

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to

I_FSM

Top & Tstg

R_θJE

400

Amps

ºC

Reach Equilibrium Between Pulses, T_A= 25ºC)^3/

Operating & Storage Temperature

-65 to +200

Maximum Thermal Resistance

Junction to Case, each individual diode

Junction to Case^3/

1.0

0.75

ºC/W

TO-258 (N)

TO-259 (P)

1/ For ordering information, price, operating curves, and availability - Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Both legs tied together.

4/ Package limited.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0145B

DOC

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与SDR60U120CAPTX相关器件

型号	品牌	获取价格	描述	数据表
SDR60U120CAPTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U120CTN	SSDI	获取价格	60 A, 1200 V Low VF Ultrafast Recovery Centertap Rectifier
SDR60U120CTNS	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U120CTNTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U120CTP	SSDI	获取价格	60 A, 1200 V Low VF Ultrafast Recovery Centertap Rectifier
SDR60U120CTPS	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U120CTPTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U120CTPTXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-259, HERMETIC SEALED P
SDR60U120DN	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-258AA, HERMETIC SEALED
SDR60U120DNS	SSDI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 60A, 1200V V(RRM), Silicon, TO-258AA, HERMETIC SEALED

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