SDR30U080J thru SDR30U120J
and
SDR40U080M thru SDR40U120M
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
30/40 AMP
Ultra Fast Recovery
Rectifier
Part Number / Ordering Information 1/
__ __ __ __
SDR55
Screening 2/
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
800 - 1200 Volts
50 nsec
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Features:
• Ultra Fast Recovery: 40 nsec typical
• High Surge Rating
• Low Reverse Leakage Current
• Low Forward Voltage Drop
Package Type
J = TO-257
M = TO-254
Voltage/Family
80 = 800V
90 = 900V
100 = 1000V
110= 1100V
120 = 1200V
• Low Junction Capacitance
• Hermetically Sealed Package
• Gold Eutectic Die Attach available
• Ultrasonic Aluminum Wire Bonds
• Ceramic Seals for improved hermeticity available
• TX, TXV, Space Level Screening Available Consult
Factory.2/
Recovery Time
UF = Ultra Fast
Maximum Ratings
Symbol
VRRM
Value
Units
Volts
Peak Repetitive Reverse and
DC Blocking Voltage
SDR30U080/SDR40U080
SDR30U090/SDR40U090
SDR30U100/SDR40U100
SDR30U110/SDR40U110
SDR30U120/SDR40U120
800
900
1000
1100
1200
VRWM
VR
TO-257
TO-254
30
40
Average Rectified Forward Current
Io
Amps
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
IFSM
250
Reach Equilibrium Between Pulses, TA = 25ºC)3/
Operating & Storage Temperature
Top & Tstg
RθJE
ºC
-65 to +200
1.25
Maximum Thermal Resistance
ºC/W
Junction to End Tab3/
TO-254 (M)
TO-257 (J)
1/ For ordering information, price, operating curves, and availability - Contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Pins 2 & 3 connected.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0143A
DOC