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SDR30U100J PDF预览

SDR30U100J

更新时间: 2024-11-23 13:13:19
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 87K
描述
Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

SDR30U100J 技术参数

生命周期:Active零件包装代码:TO-257AA
包装说明:R-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
Is Samacsys:N应用:ULTRA FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-257AA
JESD-30 代码:R-XSFM-P3最大非重复峰值正向电流:250 A
元件数量:1相数:1
端子数量:3最大输出电流:30 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SDR30U100J 数据手册

 浏览型号SDR30U100J的Datasheet PDF文件第2页 
SDR30U080J thru SDR30U120J  
and  
SDR40U080M thru SDR40U120M  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
30/40 AMP  
Ultra Fast Recovery  
Rectifier  
Part Number / Ordering Information 1/  
__ __ __ __  
SDR55  
Screening 2/  
800 - 1200 Volts  
50 nsec  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
Ultra Fast Recovery: 40 nsec typical  
High Surge Rating  
Low Reverse Leakage Current  
Low Forward Voltage Drop  
Package Type  
J = TO-257  
M = TO-254  
Voltage/Family  
80 = 800V  
90 = 900V  
100 = 1000V  
110= 1100V  
120 = 1200V  
Low Junction Capacitance  
Hermetically Sealed Package  
Gold Eutectic Die Attach available  
Ultrasonic Aluminum Wire Bonds  
Ceramic Seals for improved hermeticity available  
TX, TXV, Space Level Screening Available Consult  
Factory.2/  
Recovery Time  
UF = Ultra Fast  
Maximum Ratings  
Symbol  
VRRM  
Value  
Units  
Volts  
Peak Repetitive Reverse and  
DC Blocking Voltage  
SDR30U080/SDR40U080  
SDR30U090/SDR40U090  
SDR30U100/SDR40U100  
SDR30U110/SDR40U110  
SDR30U120/SDR40U120  
800  
900  
1000  
1100  
1200  
VRWM  
VR  
TO-257  
TO-254  
30  
40  
Average Rectified Forward Current  
Io  
Amps  
Amps  
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to  
IFSM  
250  
Reach Equilibrium Between Pulses, TA = 25ºC)3/  
Operating & Storage Temperature  
Top & Tstg  
RθJE  
ºC  
-65 to +200  
1.25  
Maximum Thermal Resistance  
ºC/W  
Junction to End Tab3/  
TO-254 (M)  
TO-257 (J)  
1/ For ordering information, price, operating curves, and availability - Contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Pins 2 & 3 connected.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0143A  
DOC  

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