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SDR100S30S PDF预览

SDR100S30S

更新时间: 2024-11-06 13:02:39
品牌 Logo 应用领域
SSDI 整流二极管高功率电源
页数 文件大小 规格书
3页 88K
描述
Rectifier Diode, 1 Phase, 1 Element, 100A, 300V V(RRM), Silicon, DO-5, HERMETIC SEALED PACKAGE-1

SDR100S30S 技术参数

生命周期:Active零件包装代码:DO-5
包装说明:O-MUPM-D1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
Is Samacsys:N应用:HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-5JESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:1000 A元件数量:1
相数:1端子数量:1
最大输出电流:100 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
最大重复峰值反向电压:300 V最大反向恢复时间:3 µs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

SDR100S30S 数据手册

 浏览型号SDR100S30S的Datasheet PDF文件第2页浏览型号SDR100S30S的Datasheet PDF文件第3页 
SDR100S20  
thru  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SDR100S50  
Designer’s Data Sheet  
100 Amp  
STANDARD RECOVERY  
Part Number/Ordering Information 1/  
SDR100S__  
__ __  
│ │  
│ │  
HIGH POWER RECTIFIER  
2/  
Screening  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
200-500 Volt  
5 µsec  
│ │  
│ │  
│ │  
│ └  
Pin Configuration (See Table 1)  
__ = Normal (Cathode to Stud)  
R = Reverse (Anode to Stud)  
Features  
:
Low Reverse Leakage Current  
Single Chip Construction  
PIV to 500V  
Family/Voltage  
20 = 200V  
30 = 300V  
40 = 400V  
50 = 500V  
Hermetically Sealed  
Low Thermal Resistance  
Higher Voltage Devices Up to 1KV Available*  
Fast and Ultra Fast Recovery Versions Available*  
For Reverse Polarity Add Suffix “R”  
TX, TXV, and S-Level Screening Available 2/  
*Contact Factory  
Maximum Ratings  
Symbol  
Value  
Units  
SDR100S20  
SDR100S30  
SDR100S40  
SDR100S50  
200  
300  
400  
500  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse  
and DC Blocking Voltage  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz Sine Wave, TA = 25°C)  
Io  
IFSM  
100  
1000  
Amps  
Amps  
ºC  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25°C)  
Operating & Storage Temperature  
TOP & TSTG  
RJC  
-65 to +200  
0.85  
Maximum Total Thermal Resistance  
Junction to Case  
ºC/W  
Notes:  
DO-5  
1/ For ordering information, price, operating curves, and availability- contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0153A  
DOC  

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