SDP60N03L

更新时间： 2024-01-25 03:37:01

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	518K
描述
N-Channel Logic Level E nhancement Mode Field E ffect Transistor

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技术参数
数据手册

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SDP60N03L 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.76	Is Samacsys：	N
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	75 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

SDP60N03L 数据手册

S DP /B60N03L

S amHop Microelectronics C orp.

May,2004 ver1.1

N-C hannel Logic Level E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for extremely low R DS (ON).

High power and current handling capability.

TO-220 & TO-263 package.

VDS S

R DS (on) ( m

Ω

)

Max

11 @ VG S = 10V

19 @ VG S = 4.5V

30V

56A

S DP S E R IE S

TO-220

S DB S E R IE S

TO-263(DD-P AK)

ABS OLUTE MAXIMUM R ATING S (TC =25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous @ TJ =125 C

-P ulsed

168

Drain-S ource Diode Forward C urrent

Maximum P ower Dissipation

@ Tc=25 C

Operating and S torage Temperature R ange

, TS TG

-65 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

2.5

62.5

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6

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