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SD883-02 PDF预览

SD883-02

更新时间: 2024-11-18 09:30:55
品牌 Logo 应用领域
富士电机 - FUJI 肖特基二极管
页数 文件大小 规格书
3页 48K
描述
SCHOTTKY BARRIER DIODE

SD883-02 技术参数

生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.39 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:70 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

SD883-02 数据手册

 浏览型号SD883-02的Datasheet PDF文件第2页浏览型号SD883-02的Datasheet PDF文件第3页 
(20V / 3.0A )  
SD883-02  
Outline drawings, mm  
SCHOTTKY BARRIER DIODE  
C A  
1.5  
2.5  
Features  
Surface-mount device  
Low VF  
Marking  
Super high speed switching  
High reliability by planer design  
Cathode mark  
C A  
Type No  
Lot. No  
Applications  
High speed switching  
Maximum ratings and characteristics  
Absolute maximum ratings  
Symbol  
VRRM  
VRSM  
Io  
Conditions  
Item  
Rating  
Unit  
V
20  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
Average output current  
Surge current  
20  
3.0  
tw=500ns, duty=1/40  
V
square wave duty=1/2  
Tl=106°C  
A
Sine wave 10ms,  
1shot  
IFSM  
Tj  
70  
A
Operating junction temperature  
Storage temperature  
-40 to +125  
-40 to +125  
°C  
°C  
Tstg  
Electrical characteristics (Ta=25°C Unless otherwise specified )  
Item  
Unit  
V
Symbol  
Conditions  
Max.  
0.39  
2.0  
IFM=3.0A  
Forward voltage drop  
Reverse current  
VFM  
IRRM  
VR=VRRM  
mA  
°C/W  
Junction to lead  
Thermal resistance  
Rth(j-l)  
12  

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