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SD820S PDF预览

SD820S

更新时间: 2024-11-11 22:22:11
品牌 Logo 应用领域
WTE 二极管瞄准线功效
页数 文件大小 规格书
3页 45K
描述
8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

SD820S 数据手册

 浏览型号SD820S的Datasheet PDF文件第2页浏览型号SD820S的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
SD820S – SD8100S  
8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
A
C
J
Guard Ring Die Construction for  
Transient Protection  
B
D
!
!
!
!
High Current Capability  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
E
PIN 1  
2
3
K
G
H
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ L  
P
P
D PAK/TO-252AA  
Mechanical Data  
Dim  
A
B
C
D
E
Min  
6.4  
5.0  
2.35  
Max  
!
!
Case: Molded Plastic  
6.8  
5.4  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: Cathode Band  
2.75  
1.60  
5.7  
!
!
!
!
!
PIN 3 -  
+ Case PIN 2  
5.3  
2.3  
0.4  
0.4  
0.3  
Weight: 0.4 grams (approx.)  
Mounting Position: Any  
Single  
G
H
J
2.7  
0.8  
Marking: Type Number  
0.6  
Standard Packaging: 16mm Tape (EIA-481)  
K
L
0.7  
0.50 Typical  
P
2.3  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
SD  
820S  
SD  
830S  
SD  
840S  
SD  
850S  
SD  
860S  
SD  
SD  
Characteristic  
Symbol  
Unit  
880S 8100S  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current  
@TL = 85°C  
8.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
I
FSM  
85  
A
Forward Voltage (Note 1)  
@IF = 8.0A  
VFM  
IRM  
0.65  
0.75  
0.85  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.2  
20  
mA  
Typical Junction Capacitance (Note 2)  
Cj  
RJA  
Tj  
400  
60  
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Ambient  
Operating Temperature Range  
-50 to +125  
-50 to +150  
Storage Temperature Range  
TSTG  
°C  
Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
SD820S – SD8100S  
1 of 3  
© 2002 Won-Top Electronics  

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Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, ROHS COM