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SD57045 PDF预览

SD57045

更新时间: 2024-11-24 22:40:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
11页 237K
描述
RF POWER TRANSISTORS The LdmoSTFAMILY

SD57045 数据手册

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SD57045  
RF POWER TRANSISTORS  
The LdmoST FAMILY  
ADVANCE DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
ν
ν
ν
ν
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
POUT = 45 W PEP with 13 dB gain @ 945 MHz  
BeO FREE PACKAGE  
M243  
(Epoxy Sealed)  
DESCRIPTION  
The SD57045 is a common source N-Channel  
Enhancement-Modelateral Field-Effect RF power  
transistor designed for broadband commercial  
and industrial applications at frequencies up to  
1.0 GHz. The SD57045 is designed for high gain  
and broadband performance operating in  
common source mode at 28V. It is ideal for base  
stationsapplications requiring high linearity.  
ORDER CODE  
BRANDING  
TSD57045  
SD57045  
PIN CONNECTION  
1. Drain  
2. Gate  
3.Source  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)  
Symbol  
Parameter  
Value  
Unit  
V
V(BR)DSS Drain Source Voltage  
65  
VDGR  
VGS  
ID  
65  
± 20  
5
V
Drain-Gate Voltage (RGS = 1 M)  
Gate-Source Voltage  
V
Drain Current  
A
PDISS  
Tj  
Power Dissipation (@ Tc = 70 oC)  
Max. Operating Junction Temperature  
Storage Temperature  
93  
W
oC  
oC  
200  
TSTG  
-65 to 200  
THERMAL DATA (Tcase = 70 oC)  
Rth(j-c)  
Rth(c-s)  
Junction-Case Thermal Resistance  
Case-Heatsink Thermal Resistance  
1.4  
0.45  
oC/W  
oC/W  
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).  
1/11  
March 2000  

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