生命周期: | Not Recommended | 包装说明: | FLANGE MOUNT, R-PDFM-F4 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 65 V |
最大漏极电流 (Abs) (ID): | 14 A | 最大漏极电流 (ID): | 14 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDFM-F4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 236 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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