Datasheet > SD380-23-21-051

SD380-23-21-051

更新时间： 2024-01-08 05:48:08

品牌	Logo	应用领域
ADVANCEDPHOTONIX		光电二极管光电二极管
页数	文件大小	规格书
1页	86K
描述
Red Enhanced Quad Cell Silicon Photodiode

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技术参数
数据手册

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SD380-23-21-051 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.58
Base Number Matches：	1

SD380-23-21-051 数据手册

Red Enhanced Quad Cell Silicon Photodiode

SD 380-23-21-051

PACKAGE DIMENSIONS INCH [mm]

.195 [4.95]

Ø1.005 [25.53]

Ø.995 [25.27]

CHIP PERIMETER

45°

.185 [4.70]

.075 [1.90]

6X Ø.018 [0.46]

45°

Ø.700 [17.78]

Ø.690 [17.53]

107°

VIEWING

ANGLE

.030 [0.76]

6X .750 [19.05]

Ø.980 [24.89]

Ø.970 [24.64]

45°

CHIP DIMENSIONS INCH [mm]

.402 [10.21] SQUARE

Ø.730 [18.54]

PIN CIRCLE

CHIP DIMENSI_ØO_.3N₈₀S_[9.6I₅N_{] A}C_CTH_IVE[_Am_REm_A]

TO-46 PACKAGE

.004 [0.10] GAP

SCHEMATIC

TO-8 PACKAGE

.004 [0.10] GAP

FEATURES

DESCRIPTION

APPLICATIONS

• Emitter Alignment

• Position sensing

• Medical and Industrial

• Low noise

The SD 380-23-21-051 is a red enhanced quad-cell

silicon photodiode used for nulling, centering, or

measuring small positional changes packaged in a

TO-8 metal package.

• Red enhanced

• High shunt resistance

• High response

SPECTRAL RESPONSE

ABSOLUTE MAXIMUM RATING

(TA)= 23°C UNLESS OTHERWISE NOTED

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0.00

SYMBOL

PARAMETER

MIN

MAX

UNITS

V_BR

Reverse Voltage

T_STG

T_O

Storage Temperature

Operating Temperature

Soldering Temperature*

-55

-40

+150

+125

+240

°C

T_S

* 1/16 inch from case for 3 seconds max.

Wavelength (nm)

ELECTRO-OPTICAL CHARACTERISTICS RATING

(TA)= 23°C UNLESS OTHERWISE NOTED

SYMBOL

CHARACTERISTIC

Dark Current

TEST CONDITIONS

V_R= 5 V

MIN

TYP

5.0

MAX

27.0

UNITS

I_D

R_SH

Shunt Resistance

V_R= 10 mV

100

V_R= 0 V, f = 1 MHz

V_R= 5 V, f = 1 MHz

Spot Scan

l= 633nm, V_R= 0 V

l= 900nm, V_R= 0 V

I = 10 jA

V_R= 0V @ l=950nm

RL = 50 ꢀ,V_R= 0 V

RL = 50 ꢀ,V_R= 10 V

375

C_J

Junction Capacitance

Spectral Application Range

Responsivity

lrange

350

0.32

0.50

1100

A/W

0.36

0.55

V_BR

NEP

Breakdown Voltage

Noise Equivalent Power

3.0x10^-14

190

W/ ¥ _Hz

t_r

Response Time**

**Response time of 10% to 90% is specified at 660nm wavelength light.

Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are

subject to change without notice.

Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com

REV 4/19/06

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